Hostname: page-component-77c89778f8-gvh9x Total loading time: 0 Render date: 2024-07-17T12:33:09.440Z Has data issue: false hasContentIssue false

High Temperature Electrical Transport Properties of Eu and Yb-doped Skutterudites

Published online by Cambridge University Press:  21 March 2011

R. H. Tedstrom
Affiliation:
Dept of Physics and Astronomy, Clemson Univ., Clemson, SC, USA
G. A. Lamberton Jr.
Affiliation:
Dept of Physics and Astronomy, Clemson Univ., Clemson, SC, USA
Terry M. Tritt
Affiliation:
Dept of Physics and Astronomy, Clemson Univ., Clemson, SC, USA
G. S. Nolas
Affiliation:
Dept of Physics University of Southern Florida, Tampa, FL, USA
Get access

Abstract

Skutterudites are a class of materials that show promise for thermoelectric applications due to their high power factor and the ability to “tune” the thermal conductivity due to the addition of “rattling” atoms into the novel structure of these materials. Thermopower and resistivity is measured and reported for a series of Eu and Yb-doped skutterudites over a temperature range of approximately 100 K – 700 K using the High Temperature Thermoelectric Probe. Sample measurement techniques are briefly discussed. Data from various dopings is presented and compared in hope of showing trends that point towards improvements in these skutterudites.

Type
Research Article
Copyright
Copyright © Materials Research Society 2002

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Fleurial, J.-P. et al. , Proceedings of the 15th Annual Conference of Thermoelectrics. Ed. By T. Caillat. Piscataway NJ: Institute of Electrical and Electronic Engineers, 1996.Google Scholar
2 Sales, B. C. et al. , Science 272 (1996): 1325.Google Scholar
3 Nolas, G. S. et al. , Appl. Phys. Lett. 77, 1855 (2000).Google Scholar
4 Sharp, J. W. et al. , J. Appl. Phys. 78, 1013 (1995).Google Scholar
5 Morelli, D. T. and Meisner, G. P., Appl. Phys. Lett. 77, 3777 (1995).Google Scholar
6 Nolas, G. S. et al. , J. Appl. Phys. 79, 4002 (1996).Google Scholar
7 Ioffe, A. F.Semiconductor Thermoelements and Thermoelectric Cooling.” London: Infosearch, 1957.Google Scholar
8 Lamberton, G. A. Jr., et al. , Appl. Phys. Lett., in press (2002).Google Scholar