Hostname: page-component-7479d7b7d-m9pkr Total loading time: 0 Render date: 2024-07-12T11:26:38.976Z Has data issue: false hasContentIssue false

High Tc Superconducting Bi-(Pb-)Sr-Ca-Cu-O Films Deposited by Pulsed Nd:Yag Laser Ablation

Published online by Cambridge University Press:  28 February 2011

J. Levoska
Affiliation:
Microelectronics and Material Physics Laboratories, University of Oulu, SF-90570 Oulu, Finland
J. Hagberg
Affiliation:
Microelectronics and Material Physics Laboratories, University of Oulu, SF-90570 Oulu, Finland
P. Pusa
Affiliation:
Microelectronics and Material Physics Laboratories, University of Oulu, SF-90570 Oulu, Finland
A. Uusimäki
Affiliation:
Microelectronics and Material Physics Laboratories, University of Oulu, SF-90570 Oulu, Finland
S. Leppävuori
Affiliation:
Microelectronics and Material Physics Laboratories, University of Oulu, SF-90570 Oulu, Finland
Get access

Abstract

High To superconducting Bi-(Pb-)Sr-Ca-Cu-O thin films were ablated on MgO(l00) substrates at room temperature using a Nd:YAG laser at 1064 or 532 nm. The target materials had compositions near Bi2-xpbxSr2Ca2+yCu3+zOy (x<0.6, y,z<l) and their zero resistivity temperatures were 101 - 105 K. The amorphous films were crystallized either by annealing near 850°C or they were first melted and then annealed. The effects of laser ablation parameters and annealing conditions were investigated. The films were studied by XRD, SEM/EDS and resistivity measurements.

The best films were annealed near 850 °C and they consisted mainly of the 2223 phase. These films had T9(midpoint) at 107 K and zero resistivity at 100 K. In the melt-treated films the amount of the 2223 phase as well as Tc was lower. The superconducting phases in the annealed films were strongly oriented with their c-axes perpendicular to the substrate surface.

Type
Research Article
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Maeda, H., Tanaka, Y., Fukutomi, M., and Asano, T., Jpn. J. Appl. Phys. 27, L209 (1988).Google Scholar
2 Kijima, N., Endo, H., Tsuchiya, J., Sumiyama, A., Mitsuno, M., and Oguri, Y., Jpn. J. Appl. Phys. 27, L1952 (1988).Google Scholar
3 Sunshine, S. A., Siegrist, T., Schneemeyer, L.F., Murphy, D.W., Cava, R.J., Batlogg, B., van Dover, R.B., Fleming, R.M., Glarum, S.H., Nakahara, S., Farrow, R., Krajewski, J.J., Zahurak, S.M, Waszczak, J.V., Marshall, J.H., Marsh, P., Rupp, L.W. Jr., and Peck, W.F., Phys. Rev. B 38, 893 (1988).Google Scholar
4 Tabata, H., Kawai, T., Kanai, M., Murata, O., and Kawai, S., Jpn. J. Appl. Phys. 28, L430 (1989).Google Scholar
5 Kanai, M., Kawai, T., Kawai, S., and Tabata, H., Appl. Phys. Lett. 54, 1802 (1989)Google Scholar
6 Levoska, J., Uusimäki, A., Hagberg, J., Rautioaho, R., Kokkomäki, T., Murtoniemi, T., and Leppävuori, S., J. Less-Comm. Met. 151, 451 (1989).Google Scholar
7 Hagberg, J., Rautioaho, R., Levoska, J., Uusimäki, A., Murtoniemi, T., Kokkomäki, T., and Leppävuori, S., Materials Lett, (to be published) (1989).Google Scholar
8 Shi, D., Tang, M., Boley, M. S., Hash, M., Vandervoort, K., Claus, H., and Lwin, Y.N., Phys. Rev. B. 40, 2247 (1989).Google Scholar