Hostname: page-component-76fb5796d-9pm4c Total loading time: 0 Render date: 2024-04-26T21:24:54.136Z Has data issue: false hasContentIssue false

High Strength Nanoscale Al/Al3Sc Multilayers formed by Interface Reaction

Published online by Cambridge University Press:  01 February 2011

M.A. Phillips
Affiliation:
Department of Materials Science & Engineering, Stanford University, Stanford, CA 94305
B.M. Clemens
Affiliation:
Department of Materials Science & Engineering, Stanford University, Stanford, CA 94305
W.D. Nix
Affiliation:
Department of Materials Science & Engineering, Stanford University, Stanford, CA 94305
Get access

Abstract

Polycrystalline Al/Sc multilayer samples are grown via magnetron sputtering. The deposition of Sc onto Al results in significant intermixing between the two components. Substrate curvature, measured in-situ during deposition, reveals behavior similar to that seen in other systems where a slow diffuser is deposited onto a fast diffuser. The multilayer films are further characterized via transmission electron microscopy (TEM), analytical electron microscopy, and X-ray diffraction (XRD), confirming the intermixing and formation of a coherent crystalline phase, likely to be Al3Sc, in the interfacial regions. Nanoindentation hardness tests show that by adding a few percent of Sc to Al films and carefully controlling the location of the Sc, increases in hardness up to 6 times that of a pure Al film can be obtained.

Type
Research Article
Copyright
Copyright © Materials Research Society 2002

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Aiura, T., Sugawara, N. and Miura, Y., Mat. Sci. Eng. A280, 139 (2000).Google Scholar
2. Asta, M. and Ozolinŝ, V., Phys. Rev. B. 64, 4104 (2001).Google Scholar
3. Floro, J.A. and Chason, E., in In Situ Real-Time Characterization of Thin Films, edited by Auciello, O. and Krauss, A.R. (John Wiley & Sons, New York, 2001) p. 191.Google Scholar
4. Freitag, J.M. and Clemens, B.M., Proc. Mater. Res. Soc. 562, 177 (1999)Google Scholar
5. Clemens, B.M. and Gay, J.G., Phys. Rev. B 35, 9337 (1987).Google Scholar
6. Nix, W.D., Mat. Sci. Eng. A234, 37 (1997).Google Scholar
7. Phillips, M.A. (unpublished work).Google Scholar