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High Sensitivity Polymer Photosensors for Image Sensing Applications

Published online by Cambridge University Press:  10 February 2011

Gang Yu
Affiliation:
UNIAX Corporation, 6780 Cortona Drive, Santa Barbara, CA 93117-3022, USAgangyu@uniax.com
Jian Wang
Affiliation:
UNIAX Corporation, 6780 Cortona Drive, Santa Barbara, CA 93117-3022, USAgangyu@uniax.com
Jon McElvain
Affiliation:
UNIAX Corporation, 6780 Cortona Drive, Santa Barbara, CA 93117-3022, USAgangyu@uniax.com
Alan J. Heeger
Affiliation:
UNIAX Corporation, 6780 Cortona Drive, Santa Barbara, CA 93117-3022, USAgangyu@uniax.com
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Abstract

Conjugated polymers and polymer blends were developed for photosensing applications. Large size photosensors fabricated in ITO/polymer/metal configuration show high photosensitivity, 0.1-0.4 A/Watt in visible and near UV, as good as that made with inorganic semiconductors. The processability of the polymeric materials allows these photosensors be made in large size, onto substrates in desire shape, or even in flexible form, hybridized or integrated with optical devices or electronic devices. Large area, full-color, digital image sensing is demonstrated using photodiode arrays made from semiconducting polymers. The photodiode arrays, fabricated by casting the semiconducting polymer from solution at room temperature, have high photosensitivity, low dark current and large dynamic range. Photo-detection with desired spectral response or multi-band selection are also demonstrated.

Type
Research Article
Copyright
Copyright © Materials Research Society 1998

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References

[1] Sariciftci, N.S., Smilowitz, L., Heeger, A.J. and Wudl, F., Science 258, 1474 (1992);Google Scholar
Sariciftci, N.S. and Heeger, A.J., US Patent 5,333,183 (July 19, 1994);Google Scholar
Sariciftci, N.S. and Heeger, A.J., US Patent 5,454,880 (Oct 3, 1995).Google Scholar
[2] Sariciftci, N.S., Braun, D., Zhang, C., Srdanov, V., Heeger, A.J., Stucky, G. and Wudl, F., Appl. Phys. Lett. 62, 585 (1993);Google Scholar
Sariciftci, N.S. and Heeger, A.J., Intern. J. Mod. Phys. B 8, 237 (1994).Google Scholar
[3] Lee, C.H., Yu, G., Moses, D., Pakbaz, K., Zhang, C., Sariciftci, N.S., Heeger, A.J. and Wudl, F., Phys. Rev. B. 48, 15425 (1993).Google Scholar
[4] Yu, G., Pakbaz, K., and Heeger, A.J., Appl. Phys. Letters 64, 3422 (1994).Google Scholar
[5] Yu, G., Gao, J., Hummelen, J.C., Wudl, F. and Heeger, A.J., Science 270, 1789 (1995).Google Scholar
[6] Yu, G. and Heeger, A.J., J. Appl. Phys. 78, 4510 (1995).Google Scholar
[7] Halls, J.J.M., Walsh, C.A., Greenham, N.C., Marseglia, E.A., Frield, R.H., Moratti, S.C. and Holmes, A.B., Nature 376, 498 (1995).Google Scholar
[8] Yu, G., Gao, J., Yang, C.-Y. and Heeger, A.J., Proceedings of SPIE (Vol. 2999): Photo-detectors: Materials and Devices, Brown, G.J. and Razeghi, M. ed., (1997) p. 306.Google Scholar
[9] Yu, G. and Cao, Y., US Provisional Patent Application: 60/055/840 (Aug. 15, 1997).Google Scholar
[10] For a review of recent progress on CMOS cameras, see: Lerner, Eric J., Laser Focus World 32(12) 54, 1996.Google Scholar
[11] Street, R.A., Wu, J., Weisfield, R., Nelson, S.E. and Nylen, P., Spring Meeting of Materials Research Society, San Francisco, April 17-21 (1995).Google Scholar
[12] Yu, G. and Heeger, A.J., Spring Meeting of Materials Research Society, San Francisco, March 31-April 4 (1997).Google Scholar
[13] Yu, G. et al. , to be published.Google Scholar