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High Resolution X-Ray Diffraction Analysis Of Gallium Nitride Grown On Sapphire By Halide Vapor Phase Epitaxy

Published online by Cambridge University Press:  15 February 2011

R. J. Matyi ,
D. Zhi ,
N. R. Perkins ,
M. N. Horton  and
T. F. Kuech
R. J. Matyi
Affiliation:
Dept. of Materials Science and Engineering, University of Wisconsin, Madison, WI 53706
D. Zhi
Affiliation:
Materials Science Program, University of Wisconsin, Madison, WI 53706
N. R. Perkins
Affiliation:
Materials Science Program, University of Wisconsin, Madison, WI 53706
M. N. Horton
Affiliation:
Materials Science Program, University of Wisconsin, Madison, WI 53706
T. F. Kuech
Affiliation:
Materials Science Program, University of Wisconsin, Madison, WI 53706 Dept. of Chemical Engineering, University of Wisconsin, Madison, WI 53706
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Abstract

We report a structural analysis of GaN layers with thicknesses ranging from 10 μm to 250 μm which have been grown on sapphire substrates by halide vapor phase epitaxy (HVPE). The effect of growth rate during HVPE growth has also been examined. The growth was performed using GaCl and ammonia as reactants; growth rates in excess of 90 μm/hr have been achieved. The structural characteristics of these layers have been performed wit'i high resolution x-ray diffractometry. Longitudinal scans parallel to the GaN [0002] direction, transverse scans perpendicular to the [0002], and reciprocal space maps of the total diffracted intensity have been obtained from a variety of GaN layers. The transverse scans typically show broad rocking curves with peak breadths of several hundreds of arcseconds. In contrast, the longitudinal scans (or “θ/2θ scans”) which are sensitive only to strains in the GaN layers (and not their mosaic distributions) showed peak widths that were at least an order of magnitude smaller and in some cases were as narrow as 16 arcseconds. These results suggest that the defect structure of the GaN layers grown by HVPE is dominated by a dislocation-induced mosaic distribution, with the effects of strain in these materials being negligible in comparison.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 423: Symposium E – III-Nitride, SiC, and Diamond Materials for Electronic , 1996 , 239
Copyright
Copyright © Materials Research Society 1996

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References

1. Ponce, Lester,F.A., Craford, M.G. and Steigerwald, D.A., Appl. Phys. Left., 66, 1249 (1995).Google Scholar
2. Matyi, R.J., Rev. Sci. Instr., 63, 5591 (1992).Google Scholar
3. Heying, B., Wu, X.H., Keller, S., Li, Y., Kapolnek, D., Keller, B.P., DenBaars, S.P. and Speck, J.S., Appl. Phys. Leit., 68, 643 (1996).Google Scholar
4. Zhu, Q., Botchkarev, A., Kim, W., Aktas, Ö., Salvador, A., Sverdlov, B., Morkog, H., Tsen, S.–C. Y. and Smith, D.J., 68, 1141 (1996).Google Scholar
5. See Safvi, S.A., Perkins, N.R., Horton, M.R. and Kuech, T.F., this proceedings.Google Scholar
6. Bloch, R., Bahr, D., Olde, J., Brügemann, L. and Press, W., Phys. Rev. B., 42, 5093 (1990).Google Scholar
7. Garstein, E.L., Z. Phys. B., 88, 327 (1992).Google Scholar
8. Kuech, T.F., Segmüller, A., Kuan, T.S. and Goorsky, M.S., J. Appl. Phv.. 67, 6497 (1990).Google Scholar
9. Krivoglaz, M.A. and Ryaboshapka, E., Phys. Metals. Metallog., 15, 18 (1963))Google Scholar