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High Resolution Transmission Electron Microscopy Study of Thermal Oxidation of Single Crystalline Aluminum Nitride

  • Jharna Chaudhuri (a1), Rac Gyu Lee (a2), Luke Owuor Nyakiti (a3), Zheng Gu (a4), James H Edgar (a5) and Peng Li (a6)...

Abstract

The impact of process conditions and crystal properties on the structure of thermal oxides formed on AlN were determined by high resolution transmission electron microscopy (HRTEM). Oxidation for 2 hours at both 800 ° and 1000 °C produced mostly amorphous oxide layers whereas oxidation for 4 and 6 hours at 1000 °C produced partly crystalline and epitaxial oxide layers. The crystalline oxide was mostly single phase á-Al2O3 except at the surface where it was a mixture of γ-Al2O3 and á-Al2O3. The amorphous oxide layer first transformed to γ-Al2O3 and then to the stable á-Al2O3 as evidenced by the non-uniform thickness of the oxide and the existence of the γ-Al2O3 at the surface. The AlN crystal contained a high density of defects at the interface at 800 °C but it was nearly defect- and oxygen-free at 1000 °C. This could be due to the rapid diffusion of the nitrogen and aluminum interstitials at high temperatures leading to a point defect equilibrium throughout the nitride. A faceted interface between Al2O3 and AlN could be attributed to non-uniform out diffusion of aluminum.

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Keywords

High Resolution Transmission Electron Microscopy Study of Thermal Oxidation of Single Crystalline Aluminum Nitride

  • Jharna Chaudhuri (a1), Rac Gyu Lee (a2), Luke Owuor Nyakiti (a3), Zheng Gu (a4), James H Edgar (a5) and Peng Li (a6)...

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