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High Resolution Etching of Gaas and Cds Crystals*

Published online by Cambridge University Press:  15 February 2011

D. V. Podlesnik ,
H.H. Gilgen ,
R.M. Osgood ,
A. Sanchez  and
V. Daneu
D. V. Podlesnik
Affiliation:
Department of Electrical Engineering, Columbia University, New York, NY 10027
H.H. Gilgen
Affiliation:
Department of Electrical Engineering, Columbia University, New York, NY 10027
R.M. Osgood
Affiliation:
Department of Electrical Engineering, Columbia University, New York, NY 10027
A. Sanchez
Affiliation:
MIT Lincoln Laboratory, Lexington, MA 02173
V. Daneu
Affiliation:
MIT Lincoln Laboratory, Lexington, MA 02173
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Abstract

Submicrometer gratings have been etched in GaAs and CdS crystals which have been immersed in an oxidizing etch and illuminated with interferring laser beams. A resolution of 170 nm was obtained. At high laser intensity and with prolonged etching time the surface properties of the material are degraded. The use of in-situ optical measurements of grating parameters allows ready optimization of the grating fabrication process.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 17: Symposium I – Laser Diagnostics and Photochemical Processing for Semiconductor Devices , 1982 , 57
Copyright
Copyright © Materials Research Society 1983

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Footnotes

*

This work was supported by the Defense Advanced Research Projects Agency and the Air Force Office of Scientific Research.

References

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