Hostname: page-component-76fb5796d-dfsvx Total loading time: 0 Render date: 2024-04-27T01:48:18.151Z Has data issue: false hasContentIssue false
  • English
  • Français

High Resolution Electron Microscopy (HREM) Study of Chemically Vapor Deposited Polycrystalline Si1-xGex Thin Films

Published online by Cambridge University Press:  17 March 2011

W. Qin ,
D. G. Ast  and
T. I. Kamins
W. Qin
Affiliation:
Department of Materials Science &Engineering Cornell University, Bard Hall, Ithaca, NY 14853
D. G. Ast
Affiliation:
Department of Materials Science &Engineering Cornell University, Bard Hall, Ithaca, NY 14853
T. I. Kamins
Affiliation:
Hewlett-Packard Laboratories, Palo Alto, CA 94304
Get access

Abstract

The microstructure of polysilicon and Si0.69Ge0.31 thin films, grown by chemical-vapordeposition (CVD) on oxidized silicon wafers covered with a very thin polysilicon seed layer, was investigated using high-resolution electron microscopy (HREM). The plan-view HREM images showed that polysilicon films contained less substructure inside grains and had fewer multiple twins and more extended twin bands than Si0.69Ge0.31. On the other hand, only SiGe contained multiple twins with five-fold symmetry. The atomic model of the second-order symmetric twin boundary proposed for Si and based on the insertion of five-member and seven-membered rings was found to describe the atomic structures of second-order symmetric twin boundaries in Si0.69Ge0.31 as well. Within the accuracy of HREM, the repeat unit of the boundary was the same in Si0.69Ge0.31 and Si.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 609: Symposium A – Amorphous & Heterogeneous Silicon Thin Films – 2000 , 2000 , A8.4
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. King, T. J., Pfiester, J. R. and Saraswat, K. C., IEEE Elec. Dev. Lett., 12, 533 (1991)Google Scholar
2. Uchino, T., Shiba, T., Ohnishi, K., Miyaushi, A., Nakata, M., Inoue, Y. and Suzuki, T., IEDM 1997, p.944 Google Scholar
3. Shieh, T. S., Krusius, J. P., Green, D. and Ozturk, M., IEEE Elec. Dev. Lett., 17, 360 (1996)Google Scholar
4. King, T. J. and Saraswat, K. C., IEEE Trans. on Elec. Dev., 41, 1581 (1994)Google Scholar
5. Mayer, J. W. and Lau, S. S., Electronic Materials Science for Integrated Circuits in Si and GaAs, p.277 Google Scholar
6. Kohn, J., American Mineralogist, 41, 778 (1956)Google Scholar
7. Honstra, J., J. Phys. Chem. Solids, 5, 129 (1958)Google Scholar
8. Vaudin, M. D., Cunningham, B. and Ast, D. G., Script Met., 17, 191 (1983)Google Scholar
9. Mackernan, S. and Carter, C. B., Solid State Phenomena, 37–38, 67 (1994)Google Scholar
10. Mackernan, S. and Carter, C. B., 50th Annual Meeting EMSA, 214 (1992)Google Scholar
11. Bourret, A. and Bachmann, J. J., Revue Phys. Appl. 22, 563 (1987)Google Scholar
12. Narayan, J., Fu, C. L. and Ho, K. M., Physical Review B, 54, 132 (1996)Google Scholar
13. Haji, L., Joubert, P., Stomenos, J. and Economou, N. A., J. Appl. Phys., 75, 3944 (1994)Google Scholar
14. Morris, J. R., Fu, C. L. and Ho, K. M., Physical Review B, 54, 132 (1996)Google Scholar