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High Resolution Direct - Write Photochemical Etching of InP Using Methyl Iodide

Published online by Cambridge University Press:  25 February 2011

K. Durose ,
J.P.L. Summersgill ,
M.R. Aylett  and
J. Haigh
K. Durose
Affiliation:
British Telecom Research Laboratories, Martlesham Heath, Ipswich, IPS 7RE, United Kingdom
J.P.L. Summersgill
Affiliation:
Lincoln College, Oxford University, United Kingdom
M.R. Aylett
Affiliation:
Lincoln College, Oxford University, United Kingdom
J. Haigh
Affiliation:
Lincoln College, Oxford University, United Kingdom
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Abstract

Photochemical etching of InP using a cw frequency doubled Ar+ laser is evaluated with a view to the production of optoelectronic device features. The diffusion-limited resolution of the unmodified etching process is discussed and a new method of etching high resolution grooves which utilises a native oxide coating is described. Grooves produced in this way have widths comparable to that of the laser beam.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 129: Symposium B – Laser and Particle-Beam Modification of Chemical Processes on Surfaces , 1988 , 285
Copyright
Copyright © Materials Research Society 1989

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References

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