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High Resistivity Oxygen-Doped AlGaAs For Power Devices

  • Yuichj Sasajima (a1), Noboru Fukuhara (a1), Masahiko Hata (a1), Takayoshi Maeda (a1) and Hideyo Okushi (a2)...

Abstract

We have succeeded in making high resistive AlxGa1−xAs by oxygen doping (AlxGa1−xAs:O) and applying them to buffer layer for power metal-semiconductor field effect transistor (MESFET). Samples of Al0.3Ga0.7As:O were prepared by metalorganic vapor phase epitaxy (MOVPE). Oxygen-related levels in A10.3Ga0.7As:O were investigated by applying isothermal capacitance transient spectroscopy (107S) to MIS (Al/Al0.3Ga0.7As:O/n-GaAs) diodes. A breakdown voltage and a two terminal gate breakdown voltage of the MESFET with the Al0.3Ga0.7As:O buffer layer became higher as increasing in the intensity of oxygen related peak in the ICTS spectra. These results indicate that the electrically active oxygen in the Al1−xGa1−xAs:O is an important factor for the device characteristics.

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High Resistivity Oxygen-Doped AlGaAs For Power Devices

  • Yuichj Sasajima (a1), Noboru Fukuhara (a1), Masahiko Hata (a1), Takayoshi Maeda (a1) and Hideyo Okushi (a2)...

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