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High Resistivity in N-Type InP and InGaAsP by He+ Ion Induced Amorphization.

Published online by Cambridge University Press:  22 February 2011

V. Sargunas ,
D. Comedi ,
J. Zhao ,
K. Jankowska ,
D.A. Thompson  and
J.G. Simmons
V. Sargunas
Affiliation:
CEMD, McMaster University, Hamilton, Ontario, L8S 4L7, Canada.
D. Comedi
Affiliation:
CEMD, McMaster University, Hamilton, Ontario, L8S 4L7, Canada.
J. Zhao
Affiliation:
CEMD, McMaster University, Hamilton, Ontario, L8S 4L7, Canada.
K. Jankowska
Affiliation:
CEMD, McMaster University, Hamilton, Ontario, L8S 4L7, Canada.
D.A. Thompson
Affiliation:
CEMD, McMaster University, Hamilton, Ontario, L8S 4L7, Canada.
J.G. Simmons
Affiliation:
CEMD, McMaster University, Hamilton, Ontario, L8S 4L7, Canada.
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Abstract

Changes in the resistivity of n-type InP and InGaAsP by He+ ion implantation have been investigated at implant temperatures of 60-523K. The highest resistivities are achieved at the lowest temperatures under the conditions where the dose is sufficient to render the implanted region amorphous, as indicated by Rutherford backscattering/channeling measurements. Anneal data indicates that the high resistivities achieved via amorphization are stable to higher temperatures than when the samples remain crystalline after implantation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 316: Symposium A – Materials Synthesis and Processing Using Ion Beams , 1993 , 117
Copyright
Copyright © Materials Research Society 1994

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References

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