Hostname: page-component-77c89778f8-7drxs Total loading time: 0 Render date: 2024-07-17T09:25:03.128Z Has data issue: false hasContentIssue false
  • English
  • Français

High rate growth of device grade silicon thin films for solar cells

Published online by Cambridge University Press:  17 March 2011

M. Kondo ,
S. Suzuki ,
Y. Nasuno  and
A. Matsuda
M. Kondo
Affiliation:
Research Initiative for Thin Film Silicon Solar Cells National Institute of advanced Industrial Science and Technology Umezono, Tsukuba, Ibaraki 305-0035, Japan
S. Suzuki
Affiliation:
Research Initiative for Thin Film Silicon Solar Cells National Institute of advanced Industrial Science and Technology Umezono, Tsukuba, Ibaraki 305-0035, Japan
Y. Nasuno
Affiliation:
Research Initiative for Thin Film Silicon Solar Cells National Institute of advanced Industrial Science and Technology Umezono, Tsukuba, Ibaraki 305-0035, Japan
A. Matsuda
Affiliation:
Research Initiative for Thin Film Silicon Solar Cells National Institute of advanced Industrial Science and Technology Umezono, Tsukuba, Ibaraki 305-0035, Japan
Get access

Abstract

We have developed a plasma enhanced chemical vapor deposition (PECVD) technique for high-rate growth of µc-Si:H at low temperatures using hydrogen diluted monosilane source gas under high-pressure depletion conditions. It was found that material qualities deteriorate, e.g. crystallinity decreases and defect density increases with increasing growth rate mainly due to ion damage from the plasma. We have found that deuterium dilution improves not only the crystallinity but also defect density as compared to hydrogen dilution and that deuterium to hydrogen ratio incorporated in the film has a good correlation with crystallinity. The advantages of the deuterium dilution are ascribed to lower ion bombardment due to slower ambipolar diffusion of deuterium ion from the plasma. Further improvement of material quality has been achieved using a triode technique where a mesh electrode inserted between cathode and anode electrodes prevents from ion bombardment. In combination with a shower head cathode, the triode technique remarkably improves the crystallinity as well as defect density at a high growth rate. As a consequence, we have succeeded to obtain much better crystallinity and uniformity at 5.8 nm/s with a defect density of 2.6×1016cm−3. We also discuss the limiting factors of growth rate and material quality for µc-Si solar cells.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 664: Symposium A – Amorphous and Heterogeneous Silicon-Based Films-2001 , 2001 , A4.3
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCE

[1] Symposium C of PVSEC 11 (Sapporo 1999).Google Scholar
[2] Staebler, D. L. and Wronski, C. R., Appl. Phys. Lett. 31, 292 (1977).Google Scholar
[3] Meier, J. et al. , Proc. Mat. Res. Soc. Symp. 420, 3 (1996).Google Scholar
[4] Yamamoto, K. et al. , Proc. Mat. Res. Soc. Symp. 507, 131 (1998).Google Scholar
[5] Guo, L., Kondo, M., Fukawa, M., Saitoh, K. and Matsuda, A., Jpn. J. Appl. Phys. 37, L1116 (1998).Google Scholar
[6] Kondo, M., Fukawa, M., Guo, L. and Matsuda, A., J. Non-Cryst. Solids, 266–269, 84 (2000).Google Scholar
[7] Matsuda, A., J. Non-Cryst. Solids, 59 & 60, 767 (1983).Google Scholar
[8] Suzuki, S., Kondo, M., Matsuda, A., Proc. Mat. Res. Soc. Symp. 2000 in press.Google Scholar
[9] Nasuno, Y. et al. , Proc 28 th IEEE PV-SC (2000 Alaska) 142.Google Scholar
[10] Fujiwara, H. et al. This volume.Google Scholar