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High Rate Deposition of Ta-C:H Using an Electron Cyclotron Wave Resonance Plasma Source

Published online by Cambridge University Press:  10 February 2011

N. A. Morrison
Affiliation:
Engineering Department, University of Cambridge, Cambridge CB2 1PZ, UK.
S. Muhl
Affiliation:
Engineering Department, University of Cambridge, Cambridge CB2 1PZ, UK.
S. E. Rodil
Affiliation:
Engineering Department, University of Cambridge, Cambridge CB2 1PZ, UK.
W. I. Milne
Affiliation:
Engineering Department, University of Cambridge, Cambridge CB2 1PZ, UK.
J. Robertson
Affiliation:
Engineering Department, University of Cambridge, Cambridge CB2 1PZ, UK.
M. Weiler
Affiliation:
CCR GmbH, Maarweg 30, 53619 Rheinbreitbach, GERMANY
P. Z. Wang
Affiliation:
Materials Science Department, University of Cambridge, Cambridge CB2 3QZ, UK.
I. Hutchings
Affiliation:
Materials Science Department, University of Cambridge, Cambridge CB2 3QZ, UK.
V. Stolojan
Affiliation:
Cavendish Laboratories, University of Cambridge, Cambridge CB3 OHE, UK.
L. M. Brown
Affiliation:
Cavendish Laboratories, University of Cambridge, Cambridge CB3 OHE, UK.
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Abstract

A compact electron cyclotron wave resonance (ECWR) source has been developed for the high rate deposition of hydrogenated tetrahedral amorphous carbon (ta-C:H). The ECWR provides growth rates of up to 900 A/mm and an independent control of the deposition rate and ion energy. The ta-C:H was deposited using acetylene as the source gas and was characterized in terms of its bonding, stress and friction coefficient. The results indicated that the ta-C:H produced using this source fulfills the necessary requirements for applications requiring enhanced tribological performance.

Type
Research Article
Copyright
Copyright © Materials Research Society 1998

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