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High Quality Silicon Epitaxy In An Ultra High Vacuum Rapid Thermal Cvd Reactor: An Application to Single Wafer Processing

Published online by Cambridge University Press:  21 February 2011

Mahesh K. Sanganeria ,
Katherine E. Violetite  and
Mehmet C. ÖztÜrk
Mahesh K. Sanganeria
Affiliation:
North Carolina State University, Department of Electrical and Computer Engineering, Box 7911, Raleigh, NC 27695-7911
Katherine E. Violetite
Affiliation:
North Carolina State University, Department of Electrical and Computer Engineering, Box 7911, Raleigh, NC 27695-7911
Mehmet C. ÖztÜrk
Affiliation:
North Carolina State University, Department of Electrical and Computer Engineering, Box 7911, Raleigh, NC 27695-7911
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Abstract

In this paper, we report epitaxial growth of silicon in an ultra high vacuum rapid thermal chemical vapor deposition (UHV/RTCVD) equipment. In this study, our objectives were low temperature/low thermal budget processing and a high throughput compatible with single wafer manufacturing. The reactor consists of a load lock, a main process chamber and an intermediate cryopumped vacuum buffer chamber between the two chambers. An ultra-clean process environment was achieved using oil free pumps and point of use gas purifiers. The wafer is heated by a Peak Systems LXU-35 arc lamp through a quartz window. In this system, we achieved good quality silicon epitaxy at low temperature (T≤800°C) in the very low, 100 mTorr, pressure regime with high throughput (Growth rate>0.25 μm/min.). High growth rate was achieved using Si2H6 as the reactant gas instead of SiH4 or SiH2C12 which are more commonly used gases for epitaxial growth. High temperature in-situ cleaning was completely eliminated by initiating film growth on a hydrogen passivated surface obtained via dilute HF etching. Generation lifetimes in the 200-400μs range were measured for deposition temperatures of 700°C, 750°C and 800°C with no strong dependence on the deposition temperature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 303: Symposium G – Rapid Thermal and Integrated Processing II , 1993 , 25
Copyright
Copyright © Materials Research Society 1993

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References

Refeerences

1. Murota, J. et al. , Appl. Phys. Lett. 54(11), 1007–1009 (1989).Google Scholar
2. Sedgwick, T. O., Berkenblit, M. and Kuan, T.S., Appl. Phys. Lett. 54(26), 2689–2691 (1989)Google Scholar
3. Nguyen, T. N. et al. ., in IEDM., San Farancisco, CA (1986).Google Scholar
4. Green, M. L. et al. , Appl. Phys. Lett. 65(15) 2558–2560 (1989).Google Scholar
5. Sturm, J. C., Gronet, C.M. and Gibbons, J.F., J. Appl. Phys. 59(12), 4180–4182 (1986).Google Scholar
6. Hsieh, T. Y. et al. , J. Electrochem. Soc. 138(4), 1188–1207 (1991).Google Scholar
7. Rahat, I. et al. , J. Electrochem. Soc. 138(8), 2370–2374 (1991).Google Scholar
8. Meyerson, B. S., Himpsel, F.J., Uram, K.J., Appl. Phys. Lett. 57(10), 1034–1036 (1990).Google Scholar
9. Burger, W.R. and Reif, R., J. Appl. Phys. 63(2), 383–389 (1988).Google Scholar
10. Schroder, D.K., Semiconductor Material and Device Characterization., (John Wiley & Sons, Inc., 1991) p.599.Google Scholar
11. Racanelli, M. et al. , J. Electrochem. Soc. 138(12), 3783–3789 (1991).Google Scholar
12. Kunii, Y. and Sakakibara, Y., Jap. J. Appl. Phys. 26(11), 1816–1822 (1987).Google Scholar
13. Lou, J. L. et al. , J. Appl. Phys. 70(2), 685–692 (1991).Google Scholar