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High Quality P-Type Gan Films Grown By Plasma-Assistedmolecular Beam Epitaxy

Published online by Cambridge University Press:  15 February 2011

J. M. Myoung ,
C. Kim ,
K. H. Shim ,
O. Gluschenkov ,
K. Kim  and
M. C. Yoo
J. M. Myoung
Affiliation:
Departments of Materials Science and Engineering
C. Kim
Affiliation:
Physics
K. H. Shim
Affiliation:
Departments of Materials Science and Engineering
O. Gluschenkov
Affiliation:
Electrical and Computer Engineering k-kim8@uiuc.edu
K. Kim
Affiliation:
Electrical and Computer Engineering k-kim8@uiuc.edu
M. C. Yoo
Affiliation:
University of Illinois at Urbana-Champaign, 1406 W. Green St., Urbana, IL 61801 On leave from Samsung Advanced Institute of Technology
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Abstract

p-type GaN films were grown on a (0001) sapphire substrate by the plasma-assisted molecular beam epitaxy. A low-contamination, high-power efficiency inductively coupled radio frequency plasma source was used, which was developed at the University of Illinois. Using an MBE system equipped with this plasma source, high-quality p-type GaN films were grown without post-growth treatment. X-ray rocking curve measurements for (0002) diffraction showed a full width at half maximum of less than 7 arcmin. The highest room-temperature hole concentration obtained was 1.4× 1020 cm−3, and for the same sample, the mobility was 2.5 cm2/Vs It is believed that the Mott-Anderson transition occurred in this sample resulting in a metallictype conductivity in the impurity subband. Low-temperature photoluminescence had a blue emission band and no deep-level transitions, indicating the high quality of the grown films. Uniformity of the Mg doping was confirmed by secondary ion mass spectrometry.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 423: Symposium E – III-Nitride, SiC, and Diamond Materials for Electronic , 1996 , 385
Copyright
Copyright © Materials Research Society 1996

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References

1 Strite, S. and Morkoç, H., J. Vac. Sci. Technol. B10, 1237 (1992).Google Scholar
2 Morkoç, H., Strite, S., Gao, G.B., Lin, M. E., Sverdlov, B., and Burns, M., J. Appl. Phys. 76, 1363 (1994).Google Scholar
3 Lin, M. E., Xue, G., Zhou, G. L., Greene, J. E., and Morkoç, H., Appl. Phys. Lett. 63, 932 (1993).Google Scholar
4 Nakamura, S., Mukai, T., Senoh, M., and Iwasa, N., Jpn. J. Appl. Phys. 31, L139 (1992).Google Scholar
5 Nakamura, S., Iwasa, N., Senoh, M., and Mukai, T., Jpn. J. Appl. Phys. 31, 1258 (1992).Google Scholar
6 Amano, H., Kito, M., Hiramatsu, K., and Akasaki, I., Jpn. J. Appl. Phys. 28, L2112 (1989).Google Scholar
7 Moustakas, T. D. and Molnar, R. J., Mat. Res. Soc. Symp. Proc. 281, 753 (1993).Google Scholar
8 Molnar, R. J., Singh, R., and Moustakas, T. D., Appl. Phys. Lett. 66, 268 (1995).Google Scholar
9 Yang, Z., Li, L. K., and Wang, W. I., Appl. Phys. Lett. 67, 1686 (1995).Google Scholar
10 Nakamura, S., Senoh, M., Nagahama, S., Iwasa, N., Yamada, T., Matsushita, T., Kiyoku, H. and Sugimoto, Y., Jpn. J. Appl. Phys. 35, L74 (1996).Google Scholar
11 Gluschenkov, O. et al., manuscript in preparation.Google Scholar
12 Mott, N. F., Proc. Phys. Soc. A62, 416 (1949); Metal-Insulator Transition (Taylor & Francis, London, 1990), pp. –169.Google Scholar
13 Anderson, P. W., Phys. Rev. 109, 1492 (1958).Google Scholar
14 Shklovskii, B. I. and Efros, A. L., Electronic Properties of Doped Semiconductors, Springer Series in Solid-State Sciences 45, (1984).Google Scholar
15 Pankove, J. I., Optical Processes in Semiconductors (Prentice-Hall, New Jersey, 1971), pp. 132–139.Google Scholar