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High Quality Poly-Si Film and Transistor Formed by Nickel-Induced- Lateral-Crystallization and Pulsed-Rapid-Thermal-Annealing

  • T.C. Leung (a1), C.F. Cheng (a1) and M.C. Poon (a1)

Abstract

Nickel Induced Lateral Crystallization (NILC) and Pulsed Rapid Thermal Annealing (PRTA) have been used to study new low temperature and high quality poly-silicon (poly-Si) films and thin film transistors (TFTs). The growth rate of poly-Si films has been found to greatly increase from 0.025μm/minute to 1.07μm/minute, and the drain current and performance of TFTs have increased by around 75%. The new poly-Si technology has good potential to apply in high performance, large area, fast throughput, low cost and even low temperature device applications.

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High Quality Poly-Si Film and Transistor Formed by Nickel-Induced- Lateral-Crystallization and Pulsed-Rapid-Thermal-Annealing

  • T.C. Leung (a1), C.F. Cheng (a1) and M.C. Poon (a1)

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