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High Quality HfO2 Film and Its Applications in Novel Poly-Si Devices

Published online by Cambridge University Press:  01 February 2011

K.L. Ng ,
N. Zhan ,
M.C. Poon ,
C.W. Kok ,
M. Chan  and
H. Wong
K.L. Ng
Affiliation:
Dept. of Electrical and Electronic Engineering, Hong Kong University of Science & Technology, Clear Water Bay, Hong Kong
N. Zhan
Affiliation:
Dept. of Electrical and Electronic Engineering, Hong Kong University of Science & Technology, Clear Water Bay, Hong Kong
M.C. Poon
Affiliation:
Dept. of Electrical and Electronic Engineering, Hong Kong University of Science & Technology, Clear Water Bay, Hong Kong
C.W. Kok
Affiliation:
Dept. of Electrical and Electronic Engineering, Hong Kong University of Science & Technology, Clear Water Bay, Hong Kong
M. Chan
Affiliation:
Dept. of Electrical and Electronic Engineering, Hong Kong University of Science & Technology, Clear Water Bay, Hong Kong
H. Wong
Affiliation:
Dept. of Electronic Engineering City University of Hong Kong, Kowloon Tong, Hong Kong
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Abstract

HfO2 as a dielectric material in MOS capacitor by direct sputtering of Hf in an O2 ambient onto a Si substrate was studied. The results showed that the interface layer formed between HfO2 and the Si substrate was affected by the RTA time in the 500°C annealing temperature. Since the interface layer is mainly composed of hafnium silicate, and has high interface trap density, the effective barrier height is therefore lowered with increased RTA time. The change in the effective barrier height will affect the FN tunneling current and the operation of the MOS devices when it is applied for nonvolatile memory devices.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 716: Symposium B – Silicon Materials-Processing, Characterization, and Reliability , 2002 , B2.6
Copyright
Copyright © Materials Research Society 2002

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