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High quality GaN layers grown on slightly miscut sapphire wafers

  • Peter Brüeckner (a1), Martin Feneberg (a2), Klaus Thonke (a3), Frank Habel (a4) and Ferdinand Scholz (a5)...

Abstract

HVPE grown layers typically show a high density of pyramidal structures on the surface. We found that a slight off-orientation of the substrate totally suppresses the development of these structures. Further we found that a misorientation toward the m-plane of GaN features a smoother surface morphology, compared to an off-orientation towards the a-plane. After the improvement of the surface morphology and other properties of the HVPE grown layers, we studied self-separation processes. Our approaches to remove the thick GaN-layer from the substrate were a low-temperature interlayer and a structured dielectric mask.

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Keywords

High quality GaN layers grown on slightly miscut sapphire wafers

  • Peter Brüeckner (a1), Martin Feneberg (a2), Klaus Thonke (a3), Frank Habel (a4) and Ferdinand Scholz (a5)...

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