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High Quality GaAs on Soi by MOCVD

Published online by Cambridge University Press:  28 February 2011

N.H. Karam ,
V. Haven ,
S. Vernon ,
J. Ramdani ,
N. El-Masry  and
N. Haegel
N.H. Karam
Affiliation:
Spire Corporation, Patriots Park, Bedford, MA 01730
V. Haven
Affiliation:
Spire Corporation, Patriots Park, Bedford, MA 01730
S. Vernon
Affiliation:
Spire Corporation, Patriots Park, Bedford, MA 01730
J. Ramdani
Affiliation:
North Carolina State University, Raleigh, NC 27615
N. El-Masry
Affiliation:
North Carolina State University, Raleigh, NC 27615
N. Haegel
Affiliation:
University of California, Los Angeles, CA 90024
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Abstract

Epitaxial GaAs films have been successfully deposited on three-inch Si wafers with a buried oxide by MOCVD. The SOI wafers were prepared using Separation by IMplantation of OXygen (SIMOX) process. High quality GaAs on SIMOX films, with dislocation density in the range of 2–6 × 106 cm-2, have been achieved using Thermal Cycle Growth (TCG) deposition technique. These films showed a 50-fold increase in the low temperature photoluminescence intensity over conventional deposition. We have also fabricated MESFET’s in GaAs on SIMOX with performance comparable to those fabricated in GaAs. The maximum measured transconductance was in the range of 175-180 ms/mm at a 1.5 µm gate length and a 5 µm source to drain separation. This is the first demonstration of large area, high quality and low defect density GaAs on SIMOX.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 160 , 1989 , 457
Copyright
Copyright © Materials Research Society 1990

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References

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