Skip to main content Accessibility help
×
Home

High Quality GaAs Mis Diodes With Very Low Surface State Density

  • Yoshihisa Fujisaki (a1), Sumiko Sakai (a1), Saburo Ataka (a2) and Kenji Shibata (a2)

Abstract

High quality GaAs/SiO2 MIS( Metal Insulator Semiconductor ) diodes were fabricated using (NH4)2S treatment and photo-assisted CVD( Chemical Vapor Deposition ). The density of states at the GaAs and SiO2 interface is the order of 1011 cm-2eV-1 throughout the forbidden energy range, which is smaller by the order of two than that of the MIS devices made by the conventional CVD process. The mechanism attributable to the interface improvement was investigated through XPS( X-ray Photoelectron Spectroscopy ) analyses.

Copyright

References

Hide All
1. Fujisaki, Y. and Goto, S. in Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures, edited by Wolford, D.J., Bernholc, J., and Haller, E.E. (Mater. Res. Soc. Proc. 163, Pittsburgh, PA 1990 ) pp. 10171020.
2. Nannichi, Y., Fan, J.F., and Oigawa, H., Jpn. J. Appl. Phys. 27, L2367 (1988).
3. Sandroff, C.J., Hegde, M.S., Farrow, L.A., Chang, C.C., and Harbison, J.P., Appl. Phys. Lett. 54, 362 (1989).
4. Carpenter, M.S., Melloch, M.R., Lundstorm, M.S., and Tobin, S.P., Appl. Phys. Lett. 52, 2157 (1988).
5. Fan, J.F., Oigawa, H., and Nannichi, Y., Jpn. J. Appl. Phys. 27, L1331 (1988).
6. Terman, L.M., Solid State Electron. 5, 285 (1962).
7. Spicer, W.E., Chye, P.W., Skeath, P.R., Su, C.Y., and Lindau, I., J. Vac. Sci. Technol. 16 (5), 1422 (1979).

Related content

Powered by UNSILO

High Quality GaAs Mis Diodes With Very Low Surface State Density

  • Yoshihisa Fujisaki (a1), Sumiko Sakai (a1), Saburo Ataka (a2) and Kenji Shibata (a2)

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed.