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High Quality GaAs Mis Diodes With Very Low Surface State Density

Published online by Cambridge University Press:  26 February 2011

Yoshihisa Fujisaki ,
Sumiko Sakai ,
Saburo Ataka  and
Kenji Shibata
Yoshihisa Fujisaki
Affiliation:
Hitachi Ltd., Central Research Laboratory, 1-280 Higashikoigakubo, Kokubunji, Tokyo 185, Japan
Sumiko Sakai
Affiliation:
Hitachi Ltd., Central Research Laboratory, 1-280 Higashikoigakubo, Kokubunji, Tokyo 185, Japan
Saburo Ataka
Affiliation:
Babcock-Hitachi K.K., Yokohama Research Lab., Yokohama, Kanagawa, Japan
Kenji Shibata
Affiliation:
Babcock-Hitachi K.K., Yokohama Research Lab., Yokohama, Kanagawa, Japan
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Abstract

High quality GaAs/SiO2 MIS( Metal Insulator Semiconductor ) diodes were fabricated using (NH4)2S treatment and photo-assisted CVD( Chemical Vapor Deposition ). The density of states at the GaAs and SiO2 interface is the order of 1011 cm-2eV-1 throughout the forbidden energy range, which is smaller by the order of two than that of the MIS devices made by the conventional CVD process. The mechanism attributable to the interface improvement was investigated through XPS( X-ray Photoelectron Spectroscopy ) analyses.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 209: Symposium K – Defects in Materials , 1990 , 703
Copyright
Copyright © Materials Research Society 1991

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References

REFERENCES

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