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High Pressure Study of III-Nitrides and Related Heterostructures

  • W. Shan (a1), J. W. Ager (a1), W. Walukiewicz (a1), E. E. Haller (a1) (a2), B. D. Little (a3), J. J. Song (a3), B. Goldenberg (a4), Z. C. Feng (a5), M. Schurman (a5) and R. A. Stall (a5)...

Abstract

We present results of photoluminescence (PL) studies of GaN, InxGa1-xN and AlxGa1-xN alloys, as well as related thin film heterostructures under hydrostatic pressure using the diamond-anvil-cell technique. The GaN PL spectra are dominated by strong and sharp near-band-edge luminescence associated with annihilations of bound excitons and intrinsic free excitons in the crystals. The spectrally well-resolved emission lines allow us to accurately determine their pressure. The PL spectra of InxGa1-xN and AlxGa1-xN epitaxial films were found to exhibit strong near-band-edge luminescence emissions. By examining the pressure dependence of these spectral features, the pressure coefficients for the PL emissions associated with the direct Γ band gap of InxGa1-xN and AlxGa1-xN were determined for the first time.

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High Pressure Study of III-Nitrides and Related Heterostructures

  • W. Shan (a1), J. W. Ager (a1), W. Walukiewicz (a1), E. E. Haller (a1) (a2), B. D. Little (a3), J. J. Song (a3), B. Goldenberg (a4), Z. C. Feng (a5), M. Schurman (a5) and R. A. Stall (a5)...

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