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High Power InAsSb/InAsSbP Laser Diodes Emitting at 3 ∼ 5 μm Range

Published online by Cambridge University Press:  10 February 2011

M. Razeghi ,
J. Diaz ,
H. J. Yi ,
D. Wu ,
B. Lane ,
A. Rybaltowski ,
Y. Xiao  and
H. Jeon
M. Razeghi
Affiliation:
Center for Quantum Devices, Northwestern University, Evanston, Illinois 60208
J. Diaz
Affiliation:
Center for Quantum Devices, Northwestern University, Evanston, Illinois 60208
H. J. Yi
Affiliation:
Center for Quantum Devices, Northwestern University, Evanston, Illinois 60208
D. Wu
Affiliation:
Center for Quantum Devices, Northwestern University, Evanston, Illinois 60208
B. Lane
Affiliation:
Center for Quantum Devices, Northwestern University, Evanston, Illinois 60208
A. Rybaltowski
Affiliation:
Center for Quantum Devices, Northwestern University, Evanston, Illinois 60208
Y. Xiao
Affiliation:
Center for Quantum Devices, Northwestern University, Evanston, Illinois 60208
H. Jeon
Affiliation:
Center for Quantum Devices, Northwestern University, Evanston, Illinois 60208
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Abstract

We report metalorganic chemical vapor deposition-grown double heterostructure and multiple quantum well InAsSb/InAsSbP laser diodes emitting at 3 to 4 μm and light emitting diodes up to 5 μm. Maximum output power up to 1 W (from two facets) with differential efficiency above 70 % up to 150 K was obtained from a MQW laser with stripe width of 100 μm and cavity length of 700 μm for emitting wavelength of 3.6 μm at 90 K. Maximum operating temperature up to 220 K with threshold current density of 40 A/cm2 at 78 K were achieved from the double-heterostructure lasers emitting at 3.2 μm. The far-field beam divergence as narrow as 24° was achieved with the use of higher energy gap barrier layers, i.e., lower effective refractive index, in MQW active region. We also discuss the effect of composition-fluctuation in the InAsSb active region on the gain and threshold current of the lasers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 450: Symposium O – Infrared Applications of Semiconductors , 1996 , 13
Copyright
Copyright © Materials Research Society 1997

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References

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