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High Planarization Efficiency and Wide Process Window Using Electro-chemical Mechanical Planarization (EcmpTM)

  • Feng Q Liu (a1), Liang Chen (a1), Alain Duboust (a1), Stan Tsai (a1), Antoine Manens (a1), Yan Wang (a1) and Wei-Yung Hsu (a1)...

Abstract

EcmpTM is a revolutionary planarization technology uniquely combining removal rate controlled by charge with superior planarization efficiency in the near no shear regime. In addition, the electrochemical removal mechanism has excellent within-wafer profile control. Multiple electrical zones configuration combined with a precise end-point control by electric charge, make it more predictable to control the remaining thickness and profile of copper film. The factors affecting the planarization such as the concentration and the efficiency of the inhibitors will be discussed in this paper. Meanwhile a planarization mechanism for Ecmp will be proposed to match the high planarization efficiency. The effects of applied voltage on removal rate and planarization efficiency will be presented in this paper. The electrical feature allows Ecmp to be a planarization process with removal rate independent of down force, enabling a wide removal rate window based on applied voltage.

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High Planarization Efficiency and Wide Process Window Using Electro-chemical Mechanical Planarization (EcmpTM)

  • Feng Q Liu (a1), Liang Chen (a1), Alain Duboust (a1), Stan Tsai (a1), Antoine Manens (a1), Yan Wang (a1) and Wei-Yung Hsu (a1)...

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