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High Performance Photoluminescence Spectroscopy using Fourier Transform Interferometry

Published online by Cambridge University Press:  25 February 2011

M.L.W. Thewalt ,
M.K. Nissen ,
D.J.S. Beckett  and
K.R. Lundgren
M.L.W. Thewalt
Affiliation:
Department of Physics, Simon Fraser University, Burnaby, BC, Canada V5A 1S6
M.K. Nissen
Affiliation:
Department of Physics, Simon Fraser University, Burnaby, BC, Canada V5A 1S6
D.J.S. Beckett
Affiliation:
Department of Physics, Simon Fraser University, Burnaby, BC, Canada V5A 1S6
K.R. Lundgren
Affiliation:
Department of Physics, Simon Fraser University, Burnaby, BC, Canada V5A 1S6
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Abstract

We present recent results on the applications of Fourier transform techniques to photoluminescence spectroscopy as it relates to both basic and characterization-related semiconductor research. The emphasis here is on demonstrating the advantages of these methods in situations requiring very high spectral resolution and/or very high sensitivity. We also provide an example of the utility of interferometry in performing photoluminescence excitation spectroscopy in spectral regions where broadly tunable laser sources are not readily available.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 163: Symposium G – Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures , 1989 , 221
Copyright
Copyright © Materials Research Society 1990

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References

1 For a recent review of FT applications in the NIR and visible see: Williams, R., App. Spectrosc. Rev. 25, 63 (1989).Google Scholar
2 McL Colley, P. and Lightowlers, E.C., Semicond. Sci. Technol. 2, 157 (1987).Google Scholar
3 MIDAC Corp. Costa Mesa, CA, USA.Google Scholar
4 Rowell, N.L., Infrared Phys. 28, 37 (1988).Google Scholar
5 Salib, E.H., Fisher, P. and Simmonds, P.E., Phys. Rev. B 32, 2424 (1985).Google Scholar
6 For a review of BMEC’s see: Thewalt, M. L. W., in Excitons. edited by Rashba, E.I. and Sturge, M.D. (North Holland, Amsterdam, 1982) pp. 393–458.Google Scholar
7 Kirczenow, G., Can. J. Phys. 55, 1787 (1977).Google Scholar
8 Parsons, R.R., Solid State Commun. 22, 671 (1977).Google Scholar
9 Kaminskii, A.S., Karasyuk, V.A. and Pokrovskii, Ya. E., Zh. Eksp. Teor. Fiz. 83, 2237 (1982) [Sov. Phys. JETP 56, 1295 (1982)].Google Scholar
10 Reynolds, D.C., Colter, P. C., Litton, C.W. and Smith, E.B., J. Appl. Phys. 55, 1610 (1984).Google Scholar
11 Bose, S.S., Lee, B., Kim, M. H. and Stlllman, G. E., Appl. Phys. Lett. 51, 937 (1987).Google Scholar
12 Shastry, S.K., Zemon, S., Kenneson, D.G. and Lambert, G., Appl. Phys. Lett. 52, 150 (1988).Google Scholar
13 Watklns, S.P., Haacke, G., Burkhard, H., Thewalt, M.L.W. and Charbonneau, S., J. Appl. Phys. 64, 3205 (1988).Google Scholar
14 Skromme, B.J., Bhat, R., Cox, H.M. and Colas, E., IEEE J. Quant. Electr. 25, 1035 (1989).Google Scholar
15 Rühle, W. and Klingenstein, W., Phys. Rev. B 18, 7011 (1978).Google Scholar
16 Stillman, G.E., Wolfe, C.M. and Dimmock, J.O., Solid State Commun. 7, 921 (1969).Google Scholar
17 Hamilton, B. and Clarke, G., Materials Science Forum 38–41, 1337 (1989).Google Scholar
18 Wagner, J., Thonke, K. and Sauer, R., Phys. Rev. B 29, 7051 (1984).Google Scholar