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High Performance Input Scanning Arrays Using Amorphous Silicon Photodiodesand Thin-Film Transistors

Published online by Cambridge University Press:  21 February 2011

Richard L. Weisfield
Richard L. Weisfield*
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304
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Abstract

The use of large area hydrogenated amorphous silicon (a-Si:H) technology has enabled compact, full page width scanners to be built inexpensively, and is now the dominant method for fabricating low-end facsimile machines. This technology has now been extended to scanners with considerably higher levels of performance. High speed, high resolution, full-width input scanning arrays have been developed using a-Si:H photodiodes and thin-film transistors (TFTs). A 12” long array has been designed to scan 3 colors at 400 spots per inch, and operates at speeds of up to 40 pages per minute, achieving a signal/noise ratio of 400:1 at intensities of 30 μWcm-2.

The color scan array is made using 3 rows of a-Si:H photodiodes, one per color, addressed by TFTs which share sets of common data lines. The data lines are arranged in a low capacitance non-crossing configuration which allows the scanner to achieve high responsivity with low crosstalk. The data lines are connected to a number of readout chips, each of which amplifies and multiplexes the photosignals onto a single video output line. Optoelectronic test results and images obtained from this device will be presented. These results indicate that high quality color images can be obtained from a-Si:H scanners, and that the present scanner is more limited by the speed of the readout chips than by the a-Si: H devices themselves.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 258: Symposium A – Amorphous Silicon Technology – 1992 , 1992 , 1105
Copyright
Copyright © Materials Research Society 1992

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References

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