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High Performance HgCdTe-Detectors Grown by Molecular Beam Epitaxy

Published online by Cambridge University Press:  10 February 2011

R. D. Rajavel
Affiliation:
Hughes Rtsearch Laboratories, Malibu, CA
D. M. Jamba
Affiliation:
Hughes Rtsearch Laboratories, Malibu, CA
J. E. Jensen
Affiliation:
Hughes Rtsearch Laboratories, Malibu, CA
O. K. Wu
Affiliation:
Hughes Rtsearch Laboratories, Malibu, CA
C. A. Cockrum
Affiliation:
Santa Barbara Research Center, Goleta, CA
J. A. Wilson
Affiliation:
Santa Barbara Research Center, Goleta, CA
E. A. Patten
Affiliation:
Santa Barbara Research Center, Goleta, CA
K. Kosai
Affiliation:
Santa Barbara Research Center, Goleta, CA
J. Rosbeck
Affiliation:
Santa Barbara Research Center, Goleta, CA
P. Goetz
Affiliation:
Santa Barbara Research Center, Goleta, CA
G. Venzor
Affiliation:
Santa Barbara Research Center, Goleta, CA
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Abstract

Molecular beam epitaxy (MBE) offers benefits such as the capability for growth of compositionally-tailored heterostructures and in-situ doping of HgCdTe alloys. These capabilities were applied to the growth of long wave infrared unispectral focal plane arrays (FPA) with 480×4 elements. The detectivity (D*) map of the FPA demonstrated performance that was higher than the specification value, with no defective channels. Two-color detectors with the n-p-n architecture, for the simultaneous detection of two closely spaced bands in the midwave infrared spectrum were also grown by MBE. These devices exhibited sharp turn-off and turn-on in both bands. The quantum efficiency was greater than 70% and average R°A values exceeded 1×106 Ω-cm2 in both bands. These result demonstrate that high performance HgCdTe devices can be grown by MBE.

Type
Research Article
Copyright
Copyright © Materials Research Society 1997

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References

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