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High Performance A-Si:H Thin Film Transistors, TFTs: The Importance of Nitride Dielectrics with no Detectable Si-Si Bonding

Published online by Cambridge University Press:  16 February 2011

S.S. He  and
G. Lucovsky
S.S. He
Affiliation:
Department of Physics, Materials Science and Engineering, and Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695–8202
G. Lucovsky
Affiliation:
Department of Physics, Materials Science and Engineering, and Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695–8202
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Abstract

This research addresses silicon nitride dielectrics for a-Si:H TFTs. Si-Si bonds in these films detected by AES have been identified as the major factor that degrades the performance of the TFTs. With no detected Si-Si bonds in the silicon nitride and a relatively low concentration of Si-NH bonds, the TFTs show optimized performance.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 336: Symposium A – Amorphous Silicon Technology - 1994 , 1994 , 787
Copyright
Copyright © Materials Research Society 1994

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References

REFERENCES

[1] Suzuki, K., in Amorphous and Microcrystallíne Semiconductor Devices, Edited by Kanicki, J., (Artech House, Boston, 1991), p. 77.Google Scholar
[2] Street, R. A. and Thompson, M. J., Appl. Phys. Lett., 45, 769 (1984).CrossRefGoogle Scholar
[3] Kanicki, J., Libsch, F. R., Griffith, J. and Polastre, , J. Appl. Phys. 69, 2339 (1991).CrossRefGoogle Scholar
[4] He, S.S., Stephens, D.J. and Lucovsky, G., MRS Symp. Proc. 297, 871 (1993).CrossRefGoogle Scholar
[5] Godet, C., Kanicki, J., and Gelatos, A.V., J. Appl. Phys. 71, 5022 (1992).Google Scholar
[6] He, S.S., Stephens, D.J., Lucovsky, G. and Hamaker, R.W., MRS Symp. Proc. 282, 505 (1992).Google Scholar
[7] He, S.S., Stephens, D.J., Hamaker, R.W. and Lucovsky, G., MRS Symp. Proc. 284, 414 (1991).Google Scholar
[8] Lustig, N. and Kanicki, J., J. Appl. Phys. 65, 3951 (1989).Google Scholar
[9] He, S.S., Stephens, D.J. and Lucovsky, G., MRS Symp. Proc.-Ca, Boston Fall (1993).Google Scholar
[10] Robertson, J. Philo. Mag. B, Vol. 63, No. 1, p. 47–77 (1991).CrossRefGoogle Scholar
[11] Kanicki, J. and Warren, W.L., J. Non-Cryst. Solids 164–166, 1055 (1993).Google Scholar