High Deposition Rate P-I-N Solar Cells Prepared from Disilane Using VHF Discharges

H. Chatham; P. K. Bhat

doi:10.1557/PROC-149-447

Abstract

We report on the influence of the discharge excitation frequency on the material properties of intrinsic a-Si:H films deposited from disilane. A monotonic increase in the deposition rate with increasing frequency is observed in the range 13.56–110 MHz. Comparison of the properties of materials deposited at ˜1.5 nm/s using 13.56 and 110 MHz discharges in disilane indicates that there are some advantages to using 110 MHz. The performance of p-i-n devices fabricated from disilane at ˜2 nm/s at these two frequencies support this conclusion. We have fabricated a device from disilane at 1.8 nm/s using a frequency of 110 MHz with an AMl.5 efficiency of 9.7%.

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High Deposition Rate P-I-N Solar Cells Prepared from Disilane Using VHF Discharges

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High Deposition Rate P-I-N Solar Cells Prepared from Disilane Using VHF Discharges

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