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High Density Dry Etching of (Ba,Sr)TiO3 and LaNiO3

  • K. P. Lee (a1), K. B. Jung (a1), A Srivastava (a1), D. Kumar (a1), R. K. Singh (a1) and S. J. Pearton (a1)...

Abstract

High density plasma etching of (Ba,Sr)TiO3 (BST) and LaNiO3 (LNO) thin films was performed in two different plasma chemistries, Cl2/Ar and CH4/H2/Ar. While the latter chemistry produced extremely low etch rates (≤ 100 Å-min−1) under all conditions, the Cl2/Ar produced a smooth anisotropic pattern transfer. The etching was still strongly ion-assisted, but maximum removal rates of ∼900 Å min−1 for both materials were achieved with selectivities of ∼16 for BST and ∼7 for LNO over Si. A single layer of thick (∼7 μm) photoresist is an effective mask under these conditions.

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1 Chaneliere, C., Autran, J. L., Devine, R. A. B. and Balland, B., Mat.Sci.Eng. Rep. R 22 269 (1998), and references therein.
2 Kaga, T., Ohkura, M., Murai, F., Yokohama, N. and Takeda, E., J.Vac.Sci. Technol. B 13 2329 (1995).
3 Itoh, K., Nakagome, Y., Kimura, S. and Watanabe, T., IEEE J. Solid State Circuits SSC–32 624 (1997).
4 Kim, S. O. and Kim, H. J., J. Vacc. Sci. Technol, B 12 3006 (1994).
5 Shimada, H. and Ohmi, T., IEEE Trans. Electron. Dev. ED–43 431 (1996).
6 Muraka, S. P., Mat. Sci. Eng. Rep. R 19 87 (1997).
7 Scott, J. F., Ann. Rev. Mater. Sci. 28 79 (1998), and references thecein.
8 Tasch, A. F. and Parker, L. H., Proc. IEEE 77 374 (1989)
9 Hubert, C., Levy, J., Carter, A. C., Chang, W., Kiechoefer, S. W., Horowitz, J. S. and Chrisey, D. B., Appl. Phys. Lett. 71 3353 (1997).
10 Horwitz, J. S., Chrisey, D. B., Pond, J. M., Auyeng, R. C. Y., Cotell, C. M., Grabowski, K. S., Dorsey, P. C. and Kluskens, M. S., Integr. Ferroelectr. 8 53 (1995)
11 Chu, C. M. and Lin, P., Apply. Phys. 72 1241 (1998).
12 Cho, H. J. and Kim, H. J., Appl. Phys. Lett. 72 786 (1998).
13 Cho, H. J., Oh, S., Kang, C. S., Hwang, C. S., Lee, B. T., Lee, K. H., Horii, H., Lee, S. I. and Lee, M. Y., Appl. Phys. Lett. 71 3221 (1998).
14 Hwang, C. S., Lee, B. T., Cho, H. J., Oh, S., Kang, C. S., Hideki, H., Lee, S. I. and Lee, M. Y., Appl. Phys. Lett. 71 371 (1998).
15 Jia, A. X., Wu, X. D., Foltyn, S. R. and Tiwari, P., Appl. Phys. Lett. 66 2197 (1995).
16 Zafar, S., Jones, R. E., Chu, P., White, B., Jiang, B., Taycor, D., Zurcher, P. and Gillespie, S., Appl. Phys. Lett. 71 2820 (1998).
17 Hou, S. J., Kwo, J., Watts, R. K., Cheng, J-Y. and Fork, D. K., Appl. Phys. Lett. 67 1387 (1995).
18 Cho, C. R., Payne, D. A. and Cho, S. L., Appl. Phys. Lett. 71 3013 (1997).
19 Chen, M. S., Wu, T. B. and Wu, J-M., Appl. Phys. Lett. 68 1430 (1996).
20 Li, A., Be, C., Lu, P., Wu, D., Xing, S. and Ming, N., Appl. Phys. Lett. 70 1616 (1997); Appl. Phys. Lett. 69 161 (1996).
21 Yang, C.-C., Chen, M.-S., Hang, T.-J., Wu, C.-M. and Wu, T.-B., Appl. Phys. Lett. 66 2643 (1995).
22 Srivastava, A., Kumar, D. and Singh, R.K., Electrochem. Solid-State Lett. (in press).

High Density Dry Etching of (Ba,Sr)TiO3 and LaNiO3

  • K. P. Lee (a1), K. B. Jung (a1), A Srivastava (a1), D. Kumar (a1), R. K. Singh (a1) and S. J. Pearton (a1)...

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