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High Carrier Concentration Improved N-Type SiGe/GaP Alloys

  • A. Nancy Scoville (a1), Clara Bajgar (a1), Jan Vandersande (a2) and Jean-Pierre Fleurial (a2)

Abstract

SiGe alloys have been fabricated with the hiqghest carrier concentrations achieved to date. Values in excess of 4.0 × 1020 have been observed. The thermoelectric behavior of these samples has been characterized, both in the as-pressed state and as a function of 3anneal time and temperature. Figures-of-merit between 0.85 and 0.90 × 10−3 K−1 have been reproducibly achieved. Further improvements will be achieved by reducing the carrier concentration.

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1. Dismukes, J.P., Ekstrom, L., Stegmeier, E.F., Kudman, I., and Beers, D.S., J. Appl. Phys., 10, 2899 (1964).
2. Vandersande, J.W., Wood, C., and Draper, S.L., Mat. Res. Soc. Symp. Proc., 97, 347 (1987).
3. Vandersande, J.W., Borshchevsky, A., Parker, J., and Wood, C., VIIIth Inter. Conf. Thermoelectrics, Arlington, TX, 76 (1988).
4. Fleurial, J.P., Borshchevsky, A., and Vandersande, J.W., Proc. 8th Symp. Space Nuclear Power, 451 (1991).

High Carrier Concentration Improved N-Type SiGe/GaP Alloys

  • A. Nancy Scoville (a1), Clara Bajgar (a1), Jan Vandersande (a2) and Jean-Pierre Fleurial (a2)

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