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Hg1−x−yCdxZnyTe: Growth, Properties and Potential for Infrared Detector Applications
Published online by Cambridge University Press: 25 February 2011
Abstract
Close-spaced isothermal vapor phase epitaxy (VPE) was used to grow quaternary Hg1−x−yCdxZnyTe epillayers on Cd1−zZnzTe substrates. Composition, resistivity, and carrier concentration depth profiles were determined in the epilayers. p-n junctions were produced from material with appropriate properties using the Hg diffusion method. The junctions showed excellent I-V characteristics and high spectral detectivities.
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- Copyright © Materials Research Society 1987
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