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Heterostructure Doping by Compact Electron Beam Sources

Published online by Cambridge University Press:  21 February 2011

P.P. Chow ,
J.Van Hove ,
M.F. Rosamond ,
G.L. Carpenter  and
L.A. Chow
P.P. Chow
Affiliation:
SVT Associates, Eden Prairie, MN
J.Van Hove
Affiliation:
SVT Associates, Eden Prairie, MN
M.F. Rosamond
Affiliation:
SVT Associates, Eden Prairie, MN
G.L. Carpenter
Affiliation:
SVT Associates, Eden Prairie, MN
L.A. Chow
Affiliation:
Stanford University, Dept. of Materials Science and Engineering, Palo Alto, CA
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Abstract

Performance of many III-V compound heterostructure devices relies on exact control of dopant placement and concentration. This requires the dopant source to be responsive and reproducible. We report a novel electron beam evaporation source for both carbon and silicon dopant incorporation in MBE growth of III-V compounds. Carbon in particular has attracted much interest as a replacement of beryllium for p-type doping in III-V compounds. Not only high doping levels are achievable, its low diffusion coefficient makes abrupt interface possible even after high temperature processing and operation. This source provides a convenient means for generating high carbon flux. It is equipped with a compact flux monitor such that the dopant levels can be adjusted in real time. The GaAs samples show excellent photoluminescence peaks and mobility results. Good carbon doping for GaSb was reported for the first time.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 326: Symposium M – Growth, Processing, and Characterization of Semiconductor Heterostructures , 1993 , 567
Copyright
Copyright © Materials Research Society 1994

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