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The Heteronucleation of and Defect Generation in MBE-Grown InAs Layers

Published online by Cambridge University Press:  26 February 2011

M. M. AI-Jassim ,
J. P. Goral ,
P. Sheldon  and
K. M. Jones
M. M. AI-Jassim
Affiliation:
Solar Energy Research Institute, 1617 Cole Blvd., Golden, CO 80401 USA
J. P. Goral
Affiliation:
Solar Energy Research Institute, 1617 Cole Blvd., Golden, CO 80401 USA
P. Sheldon
Affiliation:
Solar Energy Research Institute, 1617 Cole Blvd., Golden, CO 80401 USA
K. M. Jones
Affiliation:
Solar Energy Research Institute, 1617 Cole Blvd., Golden, CO 80401 USA
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Abstract

Epitaxial InAs layers were grown by molecular beam epitaxy (MBE) on GaAs substrates. The initial stages of nucleation were studied by in situ reflection high energy electron diffraction (RHEED). Cross-sectional TEM examination was used to investigate the morphology of the growing layer, while plan-view examination revealed the generation of misfit dislocations. The growth mode was found to depend mainly on the conditions used to nucleate the epitaxial layer. In most cases, Stranski-Krastanov type of growth was observed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 144: Symposium W – Advances in Materials, Processing and Devices in III-V Compound Semiconductors , 1988 , 183
Copyright
Copyright © Materials Research Society 1989

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References

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