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Heterojunction Bipolar Transistors (HBT) with a-Si:H or μc-Si Emitter

Published online by Cambridge University Press:  26 February 2011

J. Symonsj ,
J. Nijs ,
J. Vanhellemontk ,
K. Baerth ,
H. Michielg ,
G. Willekew ,
W. Vandervors  and
R. Mertens
J. Symonsj
Affiliation:
Interuniversity Micro-Electronics Center, Kapeldreef 75, 3030 Leuven, Belgium
J. Nijs
Affiliation:
Interuniversity Micro-Electronics Center, Kapeldreef 75, 3030 Leuven, Belgium
J. Vanhellemontk
Affiliation:
Interuniversity Micro-Electronics Center, Kapeldreef 75, 3030 Leuven, Belgium
K. Baerth
Affiliation:
Interuniversity Micro-Electronics Center, Kapeldreef 75, 3030 Leuven, Belgium
H. Michielg
Affiliation:
Interuniversity Micro-Electronics Center, Kapeldreef 75, 3030 Leuven, Belgium
G. Willekew
Affiliation:
Interuniversity Micro-Electronics Center, Kapeldreef 75, 3030 Leuven, Belgium
W. Vandervors
Affiliation:
Interuniversity Micro-Electronics Center, Kapeldreef 75, 3030 Leuven, Belgium
R. Mertens
Affiliation:
Interuniversity Micro-Electronics Center, Kapeldreef 75, 3030 Leuven, Belgium
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Abstract

In this paper phosphorous doped amorphous and microcrystalline silicon are used as emitter material for npn bipolar transistors. A heterojunction is formed between emitter and base, resulting in a higher current gain β for the same base parameters in comparison with conventional transistors. Because the amorphous silicon results in a too high emitterresistance, a compromise solution is microcrystalline silicon (μc-Si). HREM-micrographs give credit to the true heterojunction concept and show epitaxial reorganization, especially after annealing of the amorphous silicon.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 95: Symposium E – Amorphous Silicon Semiconductors--Pure and Hydrogenated , 1987 , 621
Copyright
Copyright © Materials Research Society 1987

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