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Heteroepitaxy of Si and Ge on CaF2/Si (111)

Published online by Cambridge University Press:  26 February 2011

R. W. Fathauer ,
L. J. Schowalter ,
N. Lewis  and
E. L. Hall
R. W. Fathauer
Affiliation:
General Electric Corporate Research and Development Center, P.O. Box 8, Schenectady, NY 12301
L. J. Schowalter
Affiliation:
General Electric Corporate Research and Development Center, P.O. Box 8, Schenectady, NY 12301
N. Lewis
Affiliation:
General Electric Corporate Research and Development Center, P.O. Box 8, Schenectady, NY 12301
E. L. Hall
Affiliation:
General Electric Corporate Research and Development Center, P.O. Box 8, Schenectady, NY 12301
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Abstract

Si and Ge layers have been grown on CaF /Si (111) by molecular beam epitaxy (MBE). The use of thin room-tempe rature predeposits [1] with Ge epitaxy has been found to improve the growth. Studies of the initial stages of Ge epitaxy indicate that island growth occurs, and evidence also indicates island formation occurs in the Si case as well. A qualitative model is presented which explains many of the features observed in these systems and suggests reasons for the superior growth of Ge compared to Si. Finally, use of a Ge Si, /Si superlattice is shown to improve Si epitaxy.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 54: Symposium E – Thin Films–Interfaces and Phenomena , 1985 , 313
Copyright
Copyright © Materials Research Society 1986

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References

REFERENCES

1. Asano, T. and Ishiwara, H., J. Appl. Phys. 55, 3566 (1984).Google Scholar
2. Asano, T., Wakabayashi, S., and Ishiwara, H., in Etended Abstracts of the 16th Conference on Solid State Devices and Materials. (1984), p. 519.Google Scholar
3. Wang, K.L., Solid State Technol. 28, 137 (1985).Google Scholar
4. Schowalter, L.J., Fathauer, R.W., Goehner, R.P., Turner, L.G., DeBlois, R.W., Hashimoto, S., Peng, J.-L., Gibson, W.M., and Krusius, J.P., J. Appl. Phys. 58, 302 (1985); and references therein.Google Scholar
5. Ishiwara, H. and Asano, T., Appl. Phys. Lett. 40, 66 (1982).Google Scholar
6. Schowalter, L.J., Fathauer, R.W., Turner, L.G., and Robertson, C.D., Mat. Res. Soc. Symp. Proc. Vol. 37., edited by Gibson, J.M. and Dawson, L.R. (Materials Research Society, Pittsburgh 1985), p. 151.Google Scholar
7. Fathauer, R.W., Schowalter, L.J., Lewis, N., and Hall, E.L., in Proceeding of the 1st International Symposium on Si Molecular Beam Epitaiv, edited by Bean, J.C. (The Electrochemical Society, Pennington, NJ, 1985), p. 277.Google Scholar
8. Bravman, J.C. and Sinclair, R., Electron, J. Microscropy Technique 1, 53 (1984).Google Scholar
9. Ishiwara, H., presented at the First International Si Molecular Beam Epitaxy Symposium, Toronto, 1985 (unpublished).Google Scholar
10. Stowell, M.J., in Epitaxial Growth, Part B, edited by Matthews, J.W. (Academic Press New York, 1975), p. 437.Google Scholar
11. Ellis, W.C. and Treuting, R.G., Trans. AIME 191, 53 (1951).Google Scholar
12. Sasaki, M., Hirashita, N., Onoda, H., and Hagiwara, S., Appl. Phys. Lett. 46, 1056 (1985).Google Scholar
13. Gilman, J.J., J. Appl. Phys. 31, 2208 (1960).Google Scholar
14. Mauyrakh, M.A., Orlov, A. S., and Besshapova, M.R., Adgez. Rasplavov, (Naukova dumka, Kiev, USSR, 1974), p. 103.Google Scholar
15. Sato, H. and Shinozaki, S., Surface Sci. 22, 229 (1970).Google Scholar
16. Matthews, J.W., in Physics of Thin Films, Vol. 4, edited by Hass, G. and Thun, R.E. (Academic Press, New York, 1967), p. 137.Google Scholar