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Heteroepitaxy of III-V Compounds on Si Substrates for Solar Cells and Led

Published online by Cambridge University Press:  28 February 2011

Masafumi Yamaguchi  and
Susumu Kondo
Masafumi Yamaguchi
Affiliation:
NTT Opto-electronics Laboratories, Tokai, Ibaraki-ken 319-11, Japan
Susumu Kondo
Affiliation:
NTT Opto-electronics Laboratories, Tokai, Ibaraki-ken 319-11, Japan
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Abstract

Heteroepitaxial growth of GaAs, InP, GaP and InGaP on Si substrates is studied using MOCVD (Metal-Organic Chemical Vapor Deposition). High qgaliti GaAs films on Si, with a dislocation density of about 106 cm−2, are obtained by combining strained- layer superlattice insertion and thermal cycle annealing. Reduction of dislocation density in the III-V compounds on Si is discussed based on a simple model, where dislocation annihilation is assumed to be caused by dislocation movement under thermal and misfit stress. As a result of dislocation density reduction, high-efficiency GaAs-on-Si solar cells with total-area efficiencies of 18.3% (AMO) and 20% (AM1.5), and red and yellow emissions from InGaP-on-Si light-emitting diodes (LEDs) have been realized.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 145: Symposium A – III-V Heterostructures for Electronic/Photonic Devices , 1989 , 279
Copyright
Copyright © Materials Research Society 1989

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