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Heteroepitaxial Si-, Ge-, and Gaas-On-Insulator Structures on Si Substrates by Use of Fluoride Insulators

Published online by Cambridge University Press:  28 February 2011

T. Asano ,
H. Ishiwara  and
S. Furukawa
T. Asano
Affiliation:
Graduate School of Science and Engineering, Tokyo Institute of Technology4259 Nagatsuda, Midoriku, Yokohama 227, Japan
H. Ishiwara
Affiliation:
Graduate School of Science and Engineering, Tokyo Institute of Technology4259 Nagatsuda, Midoriku, Yokohama 227, Japan
S. Furukawa
Affiliation:
Graduate School of Science and Engineering, Tokyo Institute of Technology4259 Nagatsuda, Midoriku, Yokohama 227, Japan
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Abstract

Heteroepitaxial growth of alkaline earth fluoride films on Si substrates and Si, Ge, and GaAs films on the fluoride/Si structures, is reviewed. Growth of single crystalline fluoride films on Si is first discussed. Then the usefulness of novel heteroepitaxial technologies, the predeposition method and the electron beam irradiation method, is demonstrated in the growth of Si and Ge films on CaF2/Si structures. Finally fundamental growth characteristics of GaAs films on CaF2/Si structures and annealing effects on the crystallinity of the GaAs films are described.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 91: Symposium A – Heteroepitaxy on Silicon II , 1987 , 337
Copyright
Copyright © Materials Research Society 1987

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References

REFERENCES

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