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Heteroepitaxial HgCdTe/CdZnTe/GaAs/Si Materials for Infrared Focal Plane Arrays

  • S.M. Johnson (a1), J.B. James (a1), W.L. Ahlgren (a1), W.J. Hamilton (a1), M. Ray (a1) and G.S. TOMPA (a2)...

Abstract

The structural properties of LPE-grown HgCdTe on heteroepitaxial MOCVD-grown CdZnTe/GaAs/Si substrates were evaluated using high-resolution x-ray diffraction techniques and TEM. Large tilts {up to 4°} between CdZnTe layers and GaAs/Si substrates are a general characteristic of this heteroepitaxial system and are are attributed to the interaction of closely spaced misfit dislocations that arrange to form a tilt boundary. Either {112}CdTe or {552}CdTe can be grown on {112}GaAs/Si; the {552} was shown to result from a first-order twinning operation of {112}. Lamnella {111} microtwins in {111}CdZnTe/{100}GaAs/Si substrates, measured by x-ray techniques, are not readily propagated into the LPE-grown HgCdTe layer. The x-ray FWHM of the LPE HgCdTe is typically at least a factor of two lower than that of the Si-based substrate from annealing and due to the increased thickness of the layer; both mechanisms promote dislocation interaction and annihilation. High performance MWIR and LWIR HgCdTe 128×128 hybrid focal plane arrays were fabricated on these Si-based substrates. An array average of ROAj = 17.8 ohmcm2 for a cutoff wavelength of 10.8 μm at 78K was demonstrated.

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1. Sporken, R., Lange, M.D., Masset, C., and Faurie, J.P., Appl. Phys. Lett. 57, 1449 (1990).
2. Zogg, H. and Blunier, S., Appl. Phys. Lett. 49, 1531 (1986).
3. Tiwari, A.N., Floeder, W., Blunier, S., Zogg, H., and Weibel, H., Appl. Phys. Lett. 57, 1108 (1990).
4. Zanio, K., Bean, R., Hay, K., Fischer, R., and Morkoc, H. in Heteroepitaxy on Silicon, edited by Fan, J.C.C. and Poate, J.M. (Mater. Res. Soc. Vol 67, Pittsburgh, PA, 1986), p. 141.
5. Kay, R., Bean, R., Zanio, K., Ito, C., and Mcintyre, D., Appl. Phys. Lett. 51, 2211 (1987).
6. Bean, R., Zanio, K., and Ziegler, J., J. Vac. Sci. Technol. A7(2), 343 (1989).
7. Nouhi, A., Radhakrishnan, G., Katz, J., and Koliwad, K., Appl. Phys. Lett. 52, 2028 (1988).
8. Ahlgren, W.L., Johnson, S.M., Smith, E.J., Ruth, R.P., Johnston, B.C., Kalisher, M.H., Cockrum, C.A., James, T.W., Arney, D.L., Ziegler, C.K., and Lick, W., J. Vac. Sci. Technol. A7(2), 331 (1989).
9. Cody, N.W., Sudarsan, U., and Solanki, R., J. Appl. Phys 66, 449 (1989).
10. Edwall, D.D., Bajaj, J., and Gertner, E.R., J. Vac. Sci. Technol. A., 1045 (1990).
11. Johnson, S.M., Kalisher, M.H., Ahlgren, W.L., James, J.B., and Cockrum, C.A., Appl. Phys. Lett. 56, 946 (1990).
12. Johnson, S.M., Ahlgren, W.L., Kalisher, M.H., James, J.B., and Hamilton, W.J. Jr., in Properties of II-VI Semiconductors: Bulk Cystals. Epitaxial Films. Ouantum Well Structures. and Dilute Magnetic Systems, edited by Bartolii, F.J. Jr., Schaake, H.F., and Schetzina, J.F. (Mater. Res. Soc. Vol 161, Pittsburgh, PA 1990), p. 351.
13. Arias, J.M., Shin, S.H., Zandian, M., Pasko, J.G., and DeWames, R.E., 1990 U.S. Workshop on Physics and Chemistry of HgCdTe and Novel IR Detector Materials, submitted to J. Vac. Sci. Technol. A. (1991).
14. Tung, T., Kalisher, M.H., Stevens, A.P., and Heming, P.E., in Materials for Infrared Detectors and Sources, edited by Farrow, R.F.C., Schetzina, J.F., and Cheung, J.T. (Mater. Res. Soc. Vol 90, Pittsburgh, PA 1987), p. 321.
15. Miller, K.T., Hughes Research Laboratories, unpublished.
16. Bartels, W.J. and Nijman, W., J. Cryst. Growth 44, 518 (1978).
17. Vreeland, T. Jr., Dommann, A., Tsai, C.-J., and Nicolet, M.-A., in Thin Films: Stresses and Mechanical Properties, edited by Bravman, J.C., Nix, W.D., Barnett, D.M., and Smith, D.A. (Mater. Res. Soc. Vol 130, Pittsburgh, PA 1989) p. 3.
18. Johnson, S.M., Ahlgren, W.L., Smith, M.T., Johnston, B.C., and Sen, S., in Advances in Materials. Processing. and Devices in III-V Compound Semiconductors. edited by Sadana, D.K., Eastman, L., and Dupuis, R. (Mater. Res. Soc. Vol. 144, Pittsburgh, PA 1989), p. 121.
19. Durose, K. and Russell, G.J., J. Cryst. Growth 101, 246 (1990).
20. Kleebe, H.-J., Hamilton, W.J. Jr., Ahlgren, W.L., Johnson, S.M., and Ruhle, M., in Properties of II-VI Semiconductors: Bulk Crystals. Epitaxial Films. Ouantum Well Structures. and Dilute Magnetic Systems, edited by Bartolii, F.J. Jr., Schaake, H.F., and Schetzina, J.F. (Mater. Res. Soc. Vol 161, Pittsburgh, PA 1990), p. 63.
21. Brown, P.D., Hails, J.E., Russell, G.J., and Woods, J., J. Cryst. Growth 86, 511 (1988).
22. Oron, M., Raizman, A., Shtrikman, H., and Cinader, G., Appl. Phys. Lett. 52, 1059 (1988).
23. Ligeon, E., Chami, C., Danielou, R., Feuillet, G., Fontenille, J., Saminadayar, K., Ponchet, A., Cibert, J., Gobil, Y., and Tatarenko, S., J. Appl. Phys. 67, 2428 (1990).
24. Keir, A.M., Graham, A., Barnett, S.J., Giess, J., Astles, M.G., and Irvine, S.J.C., J. Cryst. Growth 101, 572 (1990).
25. Yamaguchi, M., Tachikawa, M., Itoh, Y., Sugo, M., and Kondo, S., J. Appl. Phys 68, 4518 (1990).
26. TRO chip was supplied by the Santa Barbara Research Center program on Manufacturing Technology (MANTECH) for HgCdTe Focal Plane Arrays, Wright Research and Development Center, Wright-Patterson Air Force Base contract No. F33615-86-C-5006.
27. Johnson, S.M., Rhiger, D.R., Peterson, J.M., and Rosbeck, J.P., unpublished.

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