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Heteroepitaxial HgCdTe/CdZnTe/GaAs/Si Materials for Infrared Focal Plane Arrays

Published online by Cambridge University Press:  25 February 2011

S.M. Johnson ,
J.B. James ,
W.L. Ahlgren ,
W.J. Hamilton Jr. ,
M. Ray  and
G.S. TOMPA
S.M. Johnson
Affiliation:
Santa Barbara Research Center, 75 Coromar Drive, Goleta, CA 93117
J.B. James
Affiliation:
Santa Barbara Research Center, 75 Coromar Drive, Goleta, CA 93117
W.L. Ahlgren
Affiliation:
Santa Barbara Research Center, 75 Coromar Drive, Goleta, CA 93117
W.J. Hamilton Jr.
Affiliation:
Santa Barbara Research Center, 75 Coromar Drive, Goleta, CA 93117
M. Ray
Affiliation:
Santa Barbara Research Center, 75 Coromar Drive, Goleta, CA 93117
G.S. TOMPA
Affiliation:
EMCORE Corporation, 35 Elizabeth Avenue, Somerset, NJ 08873
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Abstract

The structural properties of LPE-grown HgCdTe on heteroepitaxial MOCVD-grown CdZnTe/GaAs/Si substrates were evaluated using high-resolution x-ray diffraction techniques and TEM. Large tilts {up to 4°} between CdZnTe layers and GaAs/Si substrates are a general characteristic of this heteroepitaxial system and are are attributed to the interaction of closely spaced misfit dislocations that arrange to form a tilt boundary. Either {112}CdTe or {552}CdTe can be grown on {112}GaAs/Si; the {552} was shown to result from a first-order twinning operation of {112}. Lamnella {111} microtwins in {111}CdZnTe/{100}GaAs/Si substrates, measured by x-ray techniques, are not readily propagated into the LPE-grown HgCdTe layer. The x-ray FWHM of the LPE HgCdTe is typically at least a factor of two lower than that of the Si-based substrate from annealing and due to the increased thickness of the layer; both mechanisms promote dislocation interaction and annihilation. High performance MWIR and LWIR HgCdTe 128×128 hybrid focal plane arrays were fabricated on these Si-based substrates. An array average of ROAj = 17.8 ohmcm2 for a cutoff wavelength of 10.8 μm at 78K was demonstrated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 216: Symposium T – Long-Wavelength Semiconductor Devices, Materials and Processes , 1990 , 141
Copyright
Copyright © Materials Research Society 1991

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References

REFERENCES

1. Sporken, R., Lange, M.D., Masset, C., and Faurie, J.P., Appl. Phys. Lett. 57, 1449 (1990).Google Scholar
2. Zogg, H. and Blunier, S., Appl. Phys. Lett. 49, 1531 (1986).CrossRefGoogle Scholar
3. Tiwari, A.N., Floeder, W., Blunier, S., Zogg, H., and Weibel, H., Appl. Phys. Lett. 57, 1108 (1990).Google Scholar
4. Zanio, K., Bean, R., Hay, K., Fischer, R., and Morkoc, H. in Heteroepitaxy on Silicon, edited by Fan, J.C.C. and Poate, J.M. (Mater. Res. Soc. Vol 67, Pittsburgh, PA, 1986), p. 141.Google Scholar
5. Kay, R., Bean, R., Zanio, K., Ito, C., and Mcintyre, D., Appl. Phys. Lett. 51, 2211 (1987).Google Scholar
6. Bean, R., Zanio, K., and Ziegler, J., J. Vac. Sci. Technol. A7(2), 343 (1989).Google Scholar
7. Nouhi, A., Radhakrishnan, G., Katz, J., and Koliwad, K., Appl. Phys. Lett. 52, 2028 (1988).Google Scholar
8. Ahlgren, W.L., Johnson, S.M., Smith, E.J., Ruth, R.P., Johnston, B.C., Kalisher, M.H., Cockrum, C.A., James, T.W., Arney, D.L., Ziegler, C.K., and Lick, W., J. Vac. Sci. Technol. A7(2), 331 (1989).Google Scholar
9. Cody, N.W., Sudarsan, U., and Solanki, R., J. Appl. Phys 66, 449 (1989).Google Scholar
10. Edwall, D.D., Bajaj, J., and Gertner, E.R., J. Vac. Sci. Technol. A., 1045 (1990).Google Scholar
11. Johnson, S.M., Kalisher, M.H., Ahlgren, W.L., James, J.B., and Cockrum, C.A., Appl. Phys. Lett. 56, 946 (1990).Google Scholar
12. Johnson, S.M., Ahlgren, W.L., Kalisher, M.H., James, J.B., and Hamilton, W.J. Jr., in Properties of II-VI Semiconductors: Bulk Cystals. Epitaxial Films. Ouantum Well Structures. and Dilute Magnetic Systems, edited by Bartolii, F.J. Jr., Schaake, H.F., and Schetzina, J.F. (Mater. Res. Soc. Vol 161, Pittsburgh, PA 1990), p. 351.Google Scholar
13. Arias, J.M., Shin, S.H., Zandian, M., Pasko, J.G., and DeWames, R.E., 1990 U.S. Workshop on Physics and Chemistry of HgCdTe and Novel IR Detector Materials, submitted to J. Vac. Sci. Technol. A. (1991).Google Scholar
14. Tung, T., Kalisher, M.H., Stevens, A.P., and Heming, P.E., in Materials for Infrared Detectors and Sources, edited by Farrow, R.F.C., Schetzina, J.F., and Cheung, J.T. (Mater. Res. Soc. Vol 90, Pittsburgh, PA 1987), p. 321.Google Scholar
15. Miller, K.T., Hughes Research Laboratories, unpublished.Google Scholar
16. Bartels, W.J. and Nijman, W., J. Cryst. Growth 44, 518 (1978).Google Scholar
17. Vreeland, T. Jr., Dommann, A., Tsai, C.-J., and Nicolet, M.-A., in Thin Films: Stresses and Mechanical Properties, edited by Bravman, J.C., Nix, W.D., Barnett, D.M., and Smith, D.A. (Mater. Res. Soc. Vol 130, Pittsburgh, PA 1989) p. 3.Google Scholar
18. Johnson, S.M., Ahlgren, W.L., Smith, M.T., Johnston, B.C., and Sen, S., in Advances in Materials. Processing. and Devices in III-V Compound Semiconductors. edited by Sadana, D.K., Eastman, L., and Dupuis, R. (Mater. Res. Soc. Vol. 144, Pittsburgh, PA 1989), p. 121.Google Scholar
19. Durose, K. and Russell, G.J., J. Cryst. Growth 101, 246 (1990).CrossRefGoogle Scholar
20. Kleebe, H.-J., Hamilton, W.J. Jr., Ahlgren, W.L., Johnson, S.M., and Ruhle, M., in Properties of II-VI Semiconductors: Bulk Crystals. Epitaxial Films. Ouantum Well Structures. and Dilute Magnetic Systems, edited by Bartolii, F.J. Jr., Schaake, H.F., and Schetzina, J.F. (Mater. Res. Soc. Vol 161, Pittsburgh, PA 1990), p. 63.Google Scholar
21. Brown, P.D., Hails, J.E., Russell, G.J., and Woods, J., J. Cryst. Growth 86, 511 (1988).Google Scholar
22. Oron, M., Raizman, A., Shtrikman, H., and Cinader, G., Appl. Phys. Lett. 52, 1059 (1988).Google Scholar
23. Ligeon, E., Chami, C., Danielou, R., Feuillet, G., Fontenille, J., Saminadayar, K., Ponchet, A., Cibert, J., Gobil, Y., and Tatarenko, S., J. Appl. Phys. 67, 2428 (1990).CrossRefGoogle Scholar
24. Keir, A.M., Graham, A., Barnett, S.J., Giess, J., Astles, M.G., and Irvine, S.J.C., J. Cryst. Growth 101, 572 (1990).CrossRefGoogle Scholar
25. Yamaguchi, M., Tachikawa, M., Itoh, Y., Sugo, M., and Kondo, S., J. Appl. Phys 68, 4518 (1990).Google Scholar
26. TRO chip was supplied by the Santa Barbara Research Center program on Manufacturing Technology (MANTECH) for HgCdTe Focal Plane Arrays, Wright Research and Development Center, Wright-Patterson Air Force Base contract No. F33615-86-C-5006.Google Scholar
27. Johnson, S.M., Rhiger, D.R., Peterson, J.M., and Rosbeck, J.P., unpublished.Google Scholar