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Hetero-Epitaxial Growth of SiC Films by CVD from Silane, Methane, Propane, and Hydrogen Mixtures

Published online by Cambridge University Press:  25 February 2011

B. Bahavar ,
M. I. Chaudhiy  and
R. J. McCluskey
B. Bahavar
Affiliation:
Center for Advanced Materials Processing, Clark-son University, Potsdam, NY
M. I. Chaudhiy
Affiliation:
Center for Advanced Materials Processing, Clark-son University, Potsdam, NY
R. J. McCluskey
Affiliation:
Center for Advanced Materials Processing, Clark-son University, Potsdam, NY
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Abstract

Epitaxial silicon carbide films have been produced on Si (100) substrates by CVD with 90% of the carbon supplied by methane and 10% by propane as compared to 100% by propane (or 100% by any carbon source more reactive than methane). This implies a methane to propane mole ratio of thirty. Among possible carbon gases, methane is the purest coimnercially available hydrocarbon source, But methane has not been commonly used for growth of silicon carbide due to its low chemical reactivity. Our process demonstrates the feasibility of achieving high SiC growth rates while using a carbon source that is predominantly methane. We have established that silicon carbide films grown at 1350 °C in a CVD reactor using the above carbon source ratio results in quality single crystalline films at similar growth rates and lower carrier concentrations than fikus grown from propane and silane.

The main tools used to characterize the grown films are X-ray and electron diffraction, optical microscopy, surface profilometry, Hall mobility measurements, and thickness measurements.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 242: Symposium G – Wide Band-Gap Semiconductors , 1992 , 555
Copyright
Copyright © Materials Research Society 1992

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References

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