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Heteroepitaxial Growth of Cubic Boron Nitride on Silicon

Published online by Cambridge University Press:  25 February 2011

G. L. Doll ,
T. A. Perry ,
J. A. Sell ,
C. A. TAYLORS  and
R. Clarke
G. L. Doll
Affiliation:
Physics Department, General Motors Research Laboratories, Warren, MI 48090–9055
T. A. Perry
Affiliation:
Physics Department, General Motors Research Laboratories, Warren, MI 48090–9055
J. A. Sell
Affiliation:
Physics Department, General Motors Research Laboratories, Warren, MI 48090–9055
C. A. TAYLORS
Affiliation:
Harrison B. Randall Laboratory of Physics, Ann Arbor, MI 48109–1120
R. Clarke
Affiliation:
Harrison B. Randall Laboratory of Physics, Ann Arbor, MI 48109–1120
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Abstract

New x-ray diffraction measurements performed on bonm nitride films deposited by pulsed excimer laser deposition are presented. The x-ray data, taken with both a molybdenum rotating anode source and synchrotron radiation, indicate that the epitaxial cBN films are ≤ 200 Å thick. We also report the successful growth of oriented crystalline diamond on the (001) surface of cBN/Si substrates using the method of pulsed laser deposition. X-ray diffraction measurements indicate that the diamond layer is 200 Å thick with a lattice constant of 3.56 Å. The structures of metastable films (cBN and diamond) are very sensitive to growth conditions: we present evidence that an epitaxial-crystalline to incoherent phase transition occurs when the thickness of the films exceeds a critical value (∼ 200 Å for our present growth conditions).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 242: Symposium G – Wide Band-Gap Semiconductors , 1992 , 585
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

[1] Venables, J. D. et al., Status and Applications of Diamond and Diamond-like Materials: An Emerging Technology (National Academy Press, Washington, DC 1990).Google Scholar
[2] Angus, J. C. and Hayman, C. C., Science 241, 913 (1988).CrossRefGoogle Scholar
[3] Shiomi, H., Tanabe, K., Nishibayashi, Y., and Fujimori, N., Jpn. J. Appl. Phys. 29, 34 (1990).Google Scholar
[4] Grot, S. A., Hatfield, C. W., Gildenblat, G. Sh, Badzian, A. R., and Badzian, T., Appl. Phys. Lett. 58, 1542 (1991).CrossRefGoogle Scholar
[5] Prins, J. F. and Gaigher, H. L., Proceedings of the Second International Conference on the New Diamond Science and Technology, Washington, DC (1990);Google Scholar
Narayan, J., Godbole, V. P., White, C. W., Science 252, 416 (1991).Google Scholar
[6] Mishima, O., Era, K., Tanaka, J., and Yamaoka, S., Appl. Phys. Lett. 53, 962 (1988).Google Scholar
[7] Tsuji, K., Japanese Patent, 2-192494 (1990).Google Scholar
[8] Doll, G. L., Sell, J. A., Taylor, C. A. II, and Clarke, R., Phys. Rev. B 43, 6816 (1991).Google Scholar
[9] Doll, G. L., Sell, J. A., Taylor, C. A. II, and Clarke, R., Proceedings of the Applied Diamond Conference 1991 First International Conference on the Application of Diamond Films and Related Materials.Google Scholar
[10] Doll, G. L., Sell, J. A., Salamanca-Riba, L., and Ballai, A. K., in Laser Ablation for Materials Synthesis, edited by Paine, D. C. and Bravman, J. C., Materials Research Society Proceedings Volume 191, Pittsburg, PA, 1990) p. 129.Google Scholar
[11] Ren, Songlin, Eklund, P. C., Doll, G. L., Bull. Am. Phys. Soc. 36, 817 (1991).Google Scholar
[12] Cullity, B. D., Elements of X-ray Diffraction, second edition, (Addison-Wesley, Reading Massachusetts, 1959), p. 262.Google Scholar
[13] Eaglesham, D. J., Gossmann, H.-J., and Cernilo, M., Phys. Rev. Lett. 65, 1227 (1990).Google Scholar
[14] Eaglesham, D. J., Pfeiffer, L. N., West, K. W., and Dykaar, D. R., Appl. Phys. Lett. 58, 65 (1991).CrossRefGoogle Scholar
[15] Doll, G. L., Sell, J. A., and Perry, T. A., in Surface Chemistry and Beam-Solid Interactions, edited by Atwater, H. A., Houle, F. A., and Lowndes, D. H., Materials Research Society Proceedings Volume 201, Pittsburg, PA, 1991) p. 207.Google Scholar
[16] Fuller, B. K., private commumication. Google Scholar
[17] Cheung, J. T. and Sankur, H., CRC Critical Reviews in Solid State and Material Sciences 15, 63 (1988).CrossRefGoogle Scholar
[18] Knight, D. S. and White, W. B., J. Mater. Res. 4, 385 (1989).Google Scholar
[19] Martin, J. A., Vazquez, L., Bernard, P., Comin, F., and Ferrer, S., Appl. Phys. Lett. 57, 1742 (1990).Google Scholar