Skip to main content Accessibility help
×
Home

Heteroepitaxial Growth of Cubic Boron Nitride on Silicon

  • G. L. Doll (a1), T. A. Perry (a1), J. A. Sell (a1), C. A. TAYLORS (a2) and R. Clarke (a2)...

Abstract

New x-ray diffraction measurements performed on bonm nitride films deposited by pulsed excimer laser deposition are presented. The x-ray data, taken with both a molybdenum rotating anode source and synchrotron radiation, indicate that the epitaxial cBN films are ≤ 200 Å thick. We also report the successful growth of oriented crystalline diamond on the (001) surface of cBN/Si substrates using the method of pulsed laser deposition. X-ray diffraction measurements indicate that the diamond layer is 200 Å thick with a lattice constant of 3.56 Å. The structures of metastable films (cBN and diamond) are very sensitive to growth conditions: we present evidence that an epitaxial-crystalline to incoherent phase transition occurs when the thickness of the films exceeds a critical value (∼ 200 Å for our present growth conditions).

Copyright

References

Hide All
[1] Venables, J. D. et al., Status and Applications of Diamond and Diamond-like Materials: An Emerging Technology (National Academy Press, Washington, DC 1990).
[2] Angus, J. C. and Hayman, C. C., Science 241, 913 (1988).
[3] Shiomi, H., Tanabe, K., Nishibayashi, Y., and Fujimori, N., Jpn. J. Appl. Phys. 29, 34 (1990).
[4] Grot, S. A., Hatfield, C. W., Gildenblat, G. Sh, Badzian, A. R., and Badzian, T., Appl. Phys. Lett. 58, 1542 (1991).
[5] Prins, J. F. and Gaigher, H. L., Proceedings of the Second International Conference on the New Diamond Science and Technology, Washington, DC (1990);
Narayan, J., Godbole, V. P., White, C. W., Science 252, 416 (1991).
[6] Mishima, O., Era, K., Tanaka, J., and Yamaoka, S., Appl. Phys. Lett. 53, 962 (1988).
[7] Tsuji, K., Japanese Patent, 2-192494 (1990).
[8] Doll, G. L., Sell, J. A., Taylor, C. A. II, and Clarke, R., Phys. Rev. B 43, 6816 (1991).
[9] Doll, G. L., Sell, J. A., Taylor, C. A. II, and Clarke, R., Proceedings of the Applied Diamond Conference 1991 First International Conference on the Application of Diamond Films and Related Materials.
[10] Doll, G. L., Sell, J. A., Salamanca-Riba, L., and Ballai, A. K., in Laser Ablation for Materials Synthesis, edited by Paine, D. C. and Bravman, J. C., Materials Research Society Proceedings Volume 191, Pittsburg, PA, 1990) p. 129.
[11] Ren, Songlin, Eklund, P. C., Doll, G. L., Bull. Am. Phys. Soc. 36, 817 (1991).
[12] Cullity, B. D., Elements of X-ray Diffraction, second edition, (Addison-Wesley, Reading Massachusetts, 1959), p. 262.
[13] Eaglesham, D. J., Gossmann, H.-J., and Cernilo, M., Phys. Rev. Lett. 65, 1227 (1990).
[14] Eaglesham, D. J., Pfeiffer, L. N., West, K. W., and Dykaar, D. R., Appl. Phys. Lett. 58, 65 (1991).
[15] Doll, G. L., Sell, J. A., and Perry, T. A., in Surface Chemistry and Beam-Solid Interactions, edited by Atwater, H. A., Houle, F. A., and Lowndes, D. H., Materials Research Society Proceedings Volume 201, Pittsburg, PA, 1991) p. 207.
[16] Fuller, B. K., private commumication.
[17] Cheung, J. T. and Sankur, H., CRC Critical Reviews in Solid State and Material Sciences 15, 63 (1988).
[18] Knight, D. S. and White, W. B., J. Mater. Res. 4, 385 (1989).
[19] Martin, J. A., Vazquez, L., Bernard, P., Comin, F., and Ferrer, S., Appl. Phys. Lett. 57, 1742 (1990).

Heteroepitaxial Growth of Cubic Boron Nitride on Silicon

  • G. L. Doll (a1), T. A. Perry (a1), J. A. Sell (a1), C. A. TAYLORS (a2) and R. Clarke (a2)...

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed