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Heavy-Ion Damage to Magnesium Diboride Films: Electrical Transport-Current Characterization

Published online by Cambridge University Press:  18 March 2011

H. R. Kerchner
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, TN
C. Cantoni
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, TN
M. Paranthaman
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, TN
D. K. Christen
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, TN
H. M. Christen
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, TN
J. R. Thompson
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, TN
D. J. Miller
Affiliation:
Argonne National Laboratory, Argonne, IL
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Abstract

The use of magnesium diboride in superconducting magnets, transmission lines, or other large-scale applications depends on the transport-current characteristics of this material in magnetic field, and how they compare to the properties of conventional and high-temperature superconductors. Thin films of boron grown on sapphire substrates during electron-beam evaporation were exposed to Mg vapor to produce 0.5-μm thick layers of the metallic compound MgB2. Four-terminal measurements of their voltagecurrent relations, E(J), were carried out before and after exposure to Bφ =1-T and higher doses of 1-Gev U ions. These doses lowered critical temperatures Tc≈39 K less than 0.1 degree, raised the normal-state resistivity, and reduced the loss-free critical current density, Jc. Higher doses added little. The reduction of current densities was greater in the presence of applied magnetic field greater than 0.1 T.

Type
Research Article
Copyright
Copyright © Materials Research Society 2002

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