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Hardness and Modulus Studies on Dielectric Thin Films

Published online by Cambridge University Press:  15 February 2011

Chien Chiang ,
Gabi Neubauer ,
Anne Sauter Mack ,
Ken Yoshioka ,
George Cuan ,
Paul A. Flinn  and
David B. Fraser
Chien Chiang
Affiliation:
Components Research Intel Corporation, 3065 Bowers Ave., Santa Clara, CA 95052
Gabi Neubauer
Affiliation:
Materials Technology, Intel Corporation, 3065 Bowers Ave., Santa Clara, CA 95052
Anne Sauter Mack
Affiliation:
Components Research Intel Corporation, 3065 Bowers Ave., Santa Clara, CA 95052
Ken Yoshioka
Affiliation:
Components Research Intel Corporation, 3065 Bowers Ave., Santa Clara, CA 95052
George Cuan
Affiliation:
Components Research Intel Corporation, 3065 Bowers Ave., Santa Clara, CA 95052
Paul A. Flinn
Affiliation:
Components Research Intel Corporation, 3065 Bowers Ave., Santa Clara, CA 95052
David B. Fraser
Affiliation:
Components Research Intel Corporation, 3065 Bowers Ave., Santa Clara, CA 95052
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Abstract

We report hardness and Young's modulus measurements on various dielectric thin films. Hardness and modulus information was derived from indentation experiments with a Berkovich triangular-based diamond indenter in an ultra micro-indentation instrument (UMIS). We studied the effect of moisture content and phosphorous doping on hardness and Young's modulus of low temperature Chemical Vapor Deposition (CVD) Si-oxides and found that dehydration and densification tend to harden samples, whereas increased P-doping results in a lower hardness. Hardness values of silicon nitride, silicon oxynitride, sputtered oxide, spin-on-glass and APCVD Si-oxides are compared. We also discuss how deposition conditions and chemical compositions correlate to dielectric properties such as stress as well as moisture uptake, thermal expansion coefficients and hardness and modulus values. Using these results, thermal stresses in encapsulated Al lines have been calculated and the calculated stress in Al is higher when encapsulated with dielectric films with higher moduli.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 265: Symposium H – Materials Reliability in Microelectronics II , 1992 , 219
Copyright
Copyright © Materials Research Society 1992

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References

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