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Hall Effect and Magnetoresistance in Undoped Poly(3 Hexylthiophene)

Published online by Cambridge University Press:  25 February 2011

Azar Assadi ,
Christer Svensson  and
Magnus Willander
Azar Assadi
Affiliation:
Dept. of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, Sweden.
Christer Svensson
Affiliation:
Dept. of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, Sweden.
Magnus Willander
Affiliation:
Dept. of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, Sweden.
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Abstract

We report studies of transport properties of thin films of undoped poly(3-hexylthiophene) (P3HT) fabricated by spinning a polymer solution onto oxidised silicon or glass. The film thicknesseswere on the order of 1000 Å. We studied magnetoresistance, the effect of magnetic field on field effect mobility and Hall effect.

Transverse magnetoresistance was measured on films on glass. A positive anomalous magnetoresistance with a saturation value of about 0.1 % was found. Transverse magnetoresistance was also studied by measuring the change of a field effect mobility with magnetic field. This measurement was performed using the field effect transistor structure. An initial mobility of 6.5 × 10−5 cm2/Vs was reduced by about 15 % in a transverse magnetic field.

We also carried out Hall effect measurements on films on glass using a Van der Pauw contact configuration. The measured Hall mobility was 2.17 × 10−5 cm2/Vs. Finally we measured the temperature dependence of the Hall mobility and found it follow the exp(T-l/4) law of variable range hopping.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 173: Symposium Q – Advanced Organic Solid State Materials , 1989 , 403
Copyright
Copyright © Materials Research Society 1990

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References

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