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H States, Impurity Passivation and Gettering Studies in H-Implanted Si Crystals
Published online by Cambridge University Press: 26 February 2011
Abstract
IR and DLTS studies of H-implanted Si crystals are performed. It is shown that H is a bistable impurity: it has an equilibrium site at a T-site for H+ and H- and at a BC-site for H°. The mechanisms of H-passivation of defects and shallow and deep impurities are discussed.
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- Copyright © Materials Research Society 1992