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Growths of AlInN Single Layers and Distributed Bragg Reflectors for VCSELs

Published online by Cambridge University Press:  07 May 2015

Y. Kozuka ,
K. Ikeyama ,
T. Yasuda ,
T. Takeuchi ,
S. Kamiyama ,
M. Iwaya  and
I. Akasaki
Y. Kozuka
Affiliation:
Faculty of Science and Technology, Meijo University
K. Ikeyama
Affiliation:
Faculty of Science and Technology, Meijo University
T. Yasuda
Affiliation:
Faculty of Science and Technology, Meijo University
T. Takeuchi
Affiliation:
Faculty of Science and Technology, Meijo University
S. Kamiyama
Affiliation:
Faculty of Science and Technology, Meijo University
M. Iwaya
Affiliation:
Faculty of Science and Technology, Meijo University
I. Akasaki
Affiliation:
Faculty of Science and Technology, Meijo University Akasaki Research Center, Nagoya University
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Abstract

We investigated MOVPE growth conditions for AlInN layers with high growth rates and obtained 0.5µm/h with smooth surfaces. We found that short gas mixing time, relatively high growth temperature, and very low In/Al supply ratio were key growth parameters in order to obtain the AlInN layers with high growth rate and smooth surface simultaneously. AlInN/GaN DBRs grown under such growth conditions showed smooth surfaces and a reflectivity of over 99%.

Keywords

crystal growthnitrideepitaxy
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1736: Symposium T – Wide-Bandgap Materials for Solid-State Lighting and Power Electronics , 2014 , mrsf14-1736-t13-08
Copyright
Copyright © Materials Research Society 2015 

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References

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