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Growths of AlInN Single Layers and Distributed Bragg Reflectors for VCSELs

  • Y. Kozuka (a1), K. Ikeyama (a1), T. Yasuda (a1), T. Takeuchi (a1), S. Kamiyama (a1), M. Iwaya (a1) and I. Akasaki (a1) (a2)...

Abstract

We investigated MOVPE growth conditions for AlInN layers with high growth rates and obtained 0.5µm/h with smooth surfaces. We found that short gas mixing time, relatively high growth temperature, and very low In/Al supply ratio were key growth parameters in order to obtain the AlInN layers with high growth rate and smooth surface simultaneously. AlInN/GaN DBRs grown under such growth conditions showed smooth surfaces and a reflectivity of over 99%.

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