Skip to main content Accessibility help

Growths of AlInN Single Layers and Distributed Bragg Reflectors for VCSELs

  • Y. Kozuka (a1), K. Ikeyama (a1), T. Yasuda (a1), T. Takeuchi (a1), S. Kamiyama (a1), M. Iwaya (a1) and I. Akasaki (a1) (a2)...


We investigated MOVPE growth conditions for AlInN layers with high growth rates and obtained 0.5µm/h with smooth surfaces. We found that short gas mixing time, relatively high growth temperature, and very low In/Al supply ratio were key growth parameters in order to obtain the AlInN layers with high growth rate and smooth surface simultaneously. AlInN/GaN DBRs grown under such growth conditions showed smooth surfaces and a reflectivity of over 99%.



Hide All
1. Cosendey, Gatien, Castiglia, Antonino et, Appl.Phys. Lett 101, 151113 (2012)
2. Feltin, E., Christmann, G. et, Electronics Lett 16th August vol. 43 No.17(2007)
3. Moser, Pascal, Blasing, Jurgen et, Japanese Journal of Applied Physics 50 (2011)
4. Sadler, Thomas C., Kappers, Menno J. et, Phys. Status Solidi C 6, No. S2, S666S670 (2009)
5. Cosendey, Gatien, Jean-François, et, Appl.Phys. Lett 98, 181111 (2011)
6. Butte, R., Feltin, E. et, Japanese Journal of Applied Physics Vol. 44, No. 10 (2005)
7. Sadler, T.C. et al. . J.CrystalGrowth 314 (2011)



Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed