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Growth Reorientation with the Annealing Temperature of SrBi2Ta2O9 Films Deposited by PLD

Published online by Cambridge University Press:  01 February 2011

Ma. P. Cruz ,
Jorge J. Portelles  and
Jesús M. Siqueiros
Ma. P. Cruz
Affiliation:
Centro de Ciencias de la Materia Condensada (CCMC)-UNAM. Km. 107, Carretera Tijuana Ensenada. Ensenada B.C., México. C.P. 22800
Jorge J. Portelles
Affiliation:
Facultad de Física-IMRE, Universidad de la Habana, Cuba.
Jesús M. Siqueiros
Affiliation:
Centro de Ciencias de la Materia Condensada (CCMC)-UNAM. Km. 107, Carretera Tijuana Ensenada. Ensenada B.C., México. C.P. 22800
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Abstract

Films of SrBi2Ta2O9 (SBT) were grown on Pt/TiO2/SiO2/Si substrates by the pulsed laser deposition (PLD) technique. The deposits were made at temperatures between 570°C and 715°C, and post-annealed at 750°C. The films grown at 610°C show a (115) preferentially orientation with a small peaks associated to (00l) planes. At higher deposition temperatures, the (00l) peaks increase their intensity, a tendency that is intensified after the heat treatment at 750°C. However, when the films grown at 590–610°C are heat-treated at 750°C, there is a reduction of the crystallites oriented in the (00l) direction, leading to an enhancement of the polarization, reflected in the maximum value of 2Pr = 9.1 μC/cm2 and a coercive field, Ec, of 52.0 KV/cm.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 784: Symposium C – Ferroelectric Thin Films XII , 2003 , C11.34
Copyright
Copyright © Materials Research Society 2004

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