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Growth, processing and characterization of GaN/AlGaN/SiC vertical n-p diodes

Published online by Cambridge University Press:  01 February 2011

Steven Boeykens ,
Maarten Leys ,
Marianne Germain ,
Jef Poortmans ,
Benny Van Daele ,
Staf Van Tendeloo ,
Ronnie Belmans  and
Gustaaf Borghs
Steven Boeykens
Affiliation:
steven.boeykens@imec.be, IMEC vzw, MCP, Kapeldreef 75, Leuven, N/A, B-3001, Belgium
Maarten Leys
Affiliation:
maarten.leys@imec.be, IMEC, Belgium
Marianne Germain
Affiliation:
Marianne.Germain@imec.be, IMEC, Belgium
Jef Poortmans
Affiliation:
jef.poortmans@imec.be, IMEC, Belgium
Benny Van Daele
Affiliation:
Benny.vandaele@ua.ac.be, Universiteit Antwerpen, EMAT, Belgium
Staf Van Tendeloo
Affiliation:
Staf.vantendeloo@ua.ac.be, Universiteit Antwerpen, EMAT, Belgium
Ronnie Belmans
Affiliation:
ronnie.belmans@esat.kuleuven.ac.be, Katholieke Universiteit Leuven, Electrical Engineering, Belgium
Gustaaf Borghs
Affiliation:
gustaaf.borghs@imec.be, IMEC, Belgium
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Abstract

Application of SiC substrates instead of the most commonly used sapphire for the heteroepitaxial growth of III-Nitrides offers advantages as better lattice matching, higher thermal conductivity, and electrical conductivity. This namely offers interesting perspectives for the development of vertical III-Nitride devices for switching purposes. For example, an AlGaN/SiC heterojunction could improve the performance of SiC bipolar transistors. In this work, n-type GaN layers have been grown by MOVPE on p-type 4H-SiC substrates using Si doped Al0.08Ga0.92N or Al0.3Ga0.7N nucleation layers. They have been characterized with temperature dependent current-voltage (I-V-T), capacitance-voltage (C-V) techniques and transmission electron microscopy (TEM).

Keywords

electrical propertiesvapor phase epitaxy (VPE)transmission electron microscopy (TEM)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 892 , 2005 , 0892-FF13-08
Copyright
Copyright © Materials Research Society 2006

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References

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