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Growth, processing and characterization of GaN/AlGaN/SiC vertical n-p diodes


Application of SiC substrates instead of the most commonly used sapphire for the heteroepitaxial growth of III-Nitrides offers advantages as better lattice matching, higher thermal conductivity, and electrical conductivity. This namely offers interesting perspectives for the development of vertical III-Nitride devices for switching purposes. For example, an AlGaN/SiC heterojunction could improve the performance of SiC bipolar transistors. In this work, n-type GaN layers have been grown by MOVPE on p-type 4H-SiC substrates using Si doped Al0.08Ga0.92N or Al0.3Ga0.7N nucleation layers. They have been characterized with temperature dependent current-voltage (I-V-T), capacitance-voltage (C-V) techniques and transmission electron microscopy (TEM).



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1 Pankove, J., Chang, S.S., Lee, H.C., Molnar, R.J., Moustakas, T.D. and Van Zeghbroeck, B., Proc. IEEE Int. Elec. Dev. Meeting, Dec. 1994, 389, 1994
2 Torvik, J.T., Pankove, J.I. and Van Zeghbroeck, B., Solid-State Electronics 44, 1229, 2000
3 Danielsson, E., Breitholtz, B., Zetterling, C.-M. and Ostling, M., Physica Scripta T79, 290, 1999
4 Vennegues, P. and Lahreche, H., Appl. Phys. Lett 77, 4310, 2000
5 Wagener, M.C., James, G. R. and Omnes, F., Appl. Phys. Lett. 83, 4193, 2003
6 Boeykens, S., Leys, M. R., Germain, M., Belmans, R. and Borghs, G., J. Cryst. Growth 272, 312, 2004
7 Torvik, J.T., Leksono, M., Pankove, J.I., Van Zeghbroeck, B., Ng, H.M. and Moustakas, T.D., Appl. Phys. Lett. 72, 1371, 1998
8 Skromme, B. J., Luckowski, E., Moore, K., Bhatnagar, M., Weitzel, C. E., Gehoski, T. and Ganser, D., J. Elec. Mat. 29, 376, 2000
9 Defives, D., Niblanc, O., Dua, C., Brylinski, C., Barthula, M., Aubry-Fortuna, V. and Meyer, F., IEEE Trans. Elec. Dev. 46, 449, 1999
10 Sze, S.M., Physics of semiconductor devices, New York, Wiley, 1981
11 Danielsson, E., Zetterling, C.-M., Ostling, M., Linthicum, K., Thomson, D.B., Nam, O.-H. and Davis, R.F., Solid-State Electronics 46, 827, 2002
12 King, S.W., Davis, R.F., Ronning, C., Benjamin, M.C. and Nemanich, R.J., J. Appl. Phys. 86, 4483, 1999
13 Danielsson, E., Zetterling, C.-M., Ostling, M., Tsvetkov, D. and Dmitriev, V.A., J. Appl. Phys. 91, 2372, 2002
14 Kroger, R., Einfeldt, S., Chierchia, R., Hommel, D., Reitmeier, Z. J., Davis, R.F. and Liu, Q. K. K., J. Appl. Phys. 97, 083501, 2005



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