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Growth of Transparent SiO2 Thin Film on Silicon at Room Temperatüre by Using I72nm Xe2* Excimer Lamp

Published online by Cambridge University Press:  10 February 2011

T. Suzuki  and
M. Murahara
T. Suzuki
Affiliation:
Department of Electrical Engineering, Tokai University, 1117 Kitakaname, Hiratsuka, Kanagawa 259‐12, Japan
M. Murahara
Affiliation:
Department of Electrical Engineering, Tokai University, 1117 Kitakaname, Hiratsuka, Kanagawa 259‐12, Japan
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Abstract

SiO2 insulator was fabricated by using Xe2* excimer lamp at room temperature. In this method, a mixrine of NF3 and O2 gases was employed as a reaction gas. When the NF3 and O2 gases were exposed to the Xe2* excimer lamp light NF3 and O2 gases inside the chamber where Si substrate was placed, SiFn and NO2 were produced by photo‐chemical reaction. The SiFn accumulates on the Si substrate, and SiO2 is formed by oxidation reaction between SiFn and NO2. Subsequently SiFn adheres onto the formed SiO2 and again oxidizes by NO2. These processes occur spontaneously, and on SiO2 film is grown. Experimental conditions were NF3:O2 = 10:1, the total gas pressure 330 torr, photo‐chemical reaction time 5 minutes, and chain reaction time 5 minutes. The results of the film characterization were a SiO2 film thickness of about 1500Å, a refractive index of 1.38, specific resistance of 1.67*1010 Ω cm and relative dielectric constant of 6.96.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 446: Amorphous and Crystalline Insulating Thin Films–1996 , 1996 , 285
Copyright
Copyright © Materials Research Society 1997

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