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Growth of thin Pb Layers on Cu(001)*

  • R. J. Culbertson (a1), Y. Kuk (a2) and L. C. Feldman (a2)

Abstract

The growth of thin Pb layers (<12 monolayers) was studied in ultrahigh vacuum by high energy ion scattering/channeling, low energy electron diffraction (LEED)), and Auger electron spectroscopy (AES). Deposition and analysis were performed at 300 K and 140 K. The Pb coverage was determined quantitatively by ion scattering. The results indicated a clear transition in the growth mode as a function of temperature. At 300 K, two-dimensional island growth was observed up to 1.0 monolayer, followed by three-dimensional epitaxial growth of strained islands. Two-dimensional island growth was observed up to 5 monolayers at 140 K. The relative positions of the overlayer atoms relative to the substrate was studied to understand two-dimensional phase transitions above room temperature.

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Research sponsored in part by the Division of Materials Sciences, USDOE contract DE-ACO5-840R21400 with Martin Marietta Energy Systems, Inc.

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[1] For example, see Epitaxial Growth, ed. by Matthews, J. W. (Academic, New York, 1975), Parts A and B.
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[10] Marra, W. C., Fuoss, P. H., and Eisnberger, P. E., Phys. Rev. Lett. 49, 1169 (1982).10.1103/PhysRevLett.49.1169
[11] Feldman, L. C., Silverman, P. J., and Stensgaard, I., Nucl. Instrum. Methods 168, 589 (1980).10.1016/0029-554X(80)91315-4
[12] Davis, H. L. and Noonan, J. R., J. Vac. Sci. Technol. 20, 842 (1982).10.1116/1.571499
[13] Kuk, Y., Culbertson, R. J., and Feldman, L. C., to be pu-llished.

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