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Growth of Tetrahedral Phases of Boron Nitride thin Films by Reactive Sputtering

Published online by Cambridge University Press:  25 February 2011

T.D. Moustakas ,
T. Lei ,
R. J. Molnar ,
C. Fountzoulas  and
E.J. Oles
T.D. Moustakas
Affiliation:
Molecular Beam Epitaxy Laboratory, Department of Electrical, Computer, and Systems Engineering, Boston University, Boston, Massachusetts, 02215, USA.
T. Lei
Affiliation:
Molecular Beam Epitaxy Laboratory, Department of Electrical, Computer, and Systems Engineering, Boston University, Boston, Massachusetts, 02215, USA.
R. J. Molnar
Affiliation:
Molecular Beam Epitaxy Laboratory, Department of Electrical, Computer, and Systems Engineering, Boston University, Boston, Massachusetts, 02215, USA.
C. Fountzoulas
Affiliation:
Molecular Beam Epitaxy Laboratory, Department of Electrical, Computer, and Systems Engineering, Boston University, Boston, Massachusetts, 02215, USA.
E.J. Oles
Affiliation:
Kennametal Inc., USA.
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Abstract

Tetrahedrally coordinated phases of boron nitride (c-BN and w-BN) were produced by reactive sputtering. The structure of the films was investigated by XRD and TEM diffraction, and found to be poly cry stalline. Films with microhardness up to 3500kg/mm2 were deposited but some degradation over time has been observed. A model for the stabilization of the tetrahedral phases over the graphitic one is proposed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 242: Symposium G – Wide Band-Gap Semiconductors , 1992 , 599
Copyright
Copyright © Materials Research Society 1992

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References

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